Read voltage optimization

ABSTRACT

A method for biasing read voltage for flash memory in a storage system, performed by the storage system, is provided. The method includes determining a first number of bit errors for a first read of data at an address in the flash memory at a previously determined optimum read voltage level. Determining a second number of bit errors for a second read of the data at the address in the flash memory at a further read voltage level. Adjusting the optimum read voltage level up or down based on a comparison of the first number of bit errors and the second number of bit errors. Iterating each method operation, to adjust the optimum read voltage level in a first direction of the further read voltage level when the second number of bit errors is less than the first number of bit errors, and to adjust the optimum read voltage level in a second direction when the second number of bit errors is greater than the first number of bit errors.

BACKGROUND

Flash memory is in increasing usage as storage memory in solid-statestorage systems. Each flash memory cell can be erased, through removalof charge from a floating gate of the cell, and programmed, throughaddition of charge to the floating gate of the cell. To read a valuefrom the cell, one bit for single level cell flash, and two or more bitsfor multilevel cell flash, a read voltage is applied to a control gateof the cell, and the cell either conducts or does not conduct, dependingon whether the read voltage exceeds or does not exceed the thresholdvoltage for the cell. Threshold voltage (whether programmed or not) candrift over time, from charge loss (or gain), aging of circuitry, andother causes. Some flash memories have adjustable read voltage(s), tocompensate for threshold voltage drift. One standard technique forstorage systems is to apply a default read voltage until errors becomeunacceptable, then try another read voltage in attempt to recover data,and afterwards reverting to the default read voltage for subsequentaccesses. With aging flash memory or long-term storage of data, thisstandard technique results in multiple retries and longer read times,which the user observes as longer latency for data reads. Therefore,there is a need in the art for a solution which overcomes the drawbacksdescribed above.

SUMMARY

In some embodiments, a method for biasing read voltage for flash memoryin a storage system, performed by the storage system, is provided. Themethod includes determining a first number of bit errors for a firstread of data at an address in the flash memory at a previouslydetermined optimum read voltage level. Determining a second number ofbit errors for a second read of the data at the address in the flashmemory at a further read voltage level. Adjusting the optimum readvoltage level up or down based on a comparison of the first number ofbit errors and the second number of bit errors. Iterating each methodoperation, to adjust the optimum read voltage level in a first directionof the further read voltage level when the second number of bit errorsis less than the first number of bit errors, and to adjust the optimumread voltage level in a second direction when the second number of biterrors is greater than the first number of bit errors. The method may beembodied as executable instructions on a tangible, non-transitory,computer-readable media. The method may be executed by a processor of acomputing device.

Other aspects and advantages of the embodiments will become apparentfrom the following detailed description taken in conjunction with theaccompanying drawings which illustrate, by way of example, theprinciples of the described embodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

The described embodiments and the advantages thereof may best beunderstood by reference to the following description taken inconjunction with the accompanying drawings. These drawings in no waylimit any changes in form and detail that may be made to the describedembodiments by one skilled in the art without departing from the spiritand scope of the described embodiments.

The present disclosure is illustrated by way of example, and not by wayof limitation, and can be more fully understood with reference to thefollowing detailed description when considered in connection with thefigures as described below.

FIG. 1A illustrates a first example system for data storage inaccordance with some implementations.

FIG. 1B illustrates a second example system for data storage inaccordance with some implementations.

FIG. 1C illustrates a third example system for data storage inaccordance with some implementations.

FIG. 1D illustrates a fourth example system for data storage inaccordance with some implementations.

FIG. 2A is a perspective view of a storage cluster with multiple storagenodes and internal storage coupled to each storage node to providenetwork attached storage, in accordance with some embodiments.

FIG. 2B is a block diagram showing an interconnect switch couplingmultiple storage nodes in accordance with some embodiments.

FIG. 2C is a multiple level block diagram, showing contents of a storagenode and contents of one of the non-volatile solid state storage unitsin accordance with some embodiments.

FIG. 2D shows a storage server environment, which uses embodiments ofthe storage nodes and storage units of FIGS. 1-3 in accordance with someembodiments.

FIG. 2E is a blade hardware block diagram, showing a control plane,compute and storage planes, and authorities interacting with underlyingphysical resources, in accordance with some embodiments.

FIG. 2F depicts elasticity software layers in blades of a storagecluster, in accordance with some embodiments.

FIG. 2G depicts authorities and storage resources in blades of a storagecluster, in accordance with some embodiments.

FIG. 3A sets forth a diagram of a storage system that is coupled fordata communications with a cloud services provider in accordance withsome embodiments of the present disclosure.

FIG. 3B sets forth a diagram of a storage system in accordance with someembodiments of the present disclosure.

FIG. 4A depicts effects of optimized and non-optimized read voltagelevels on read values for an example single level cell flash memory.

FIG. 4B depicts optimized read voltage levels and read values for anexample multilevel cell flash memory with two bits per cell.

FIG. 4C depicts optimized read voltage levels and read values for anexample multilevel cell flash memory with three bits per cell, alsoknown as triple level cell flash memory.

FIG. 5 depicts an example command for adjusting a read voltage level ofa multilevel cell flash memory.

FIG. 6 sets forth a system diagram of a storage system that tracks bitflips and adjusts read voltage levels of multilevel cell flash memory.

FIG. 7 is a flow diagram of a method of biasing read voltage for flashmemory in a storage system, which is practiced by the storage system andmore specifically by one or more processors of the storage system.

FIG. 8 is an illustration showing an exemplary computing device whichmay implement the embodiments described herein.

FIG. 9 is a system action diagram depicting a storage system iteratingadjustment of an optimal read voltage level for flash memory, inaccordance with an embodiment of the description.

FIG. 10 is a flow diagram of a further method of biasing read voltagefor flash memory in a storage system, which is practiced by the storagesystem and more specifically by one or more processors of the storagesystem.

DETAILED DESCRIPTION

Solid-state storage systems described herein, and variations thereof,include embodiments that determine and track optimum read voltagethresholds in flash memory. Bit flips in reads of flash memory aredetermined based on error correction, and optimized read voltage levelsfor the flash memory are determined based on the tracking of bit flips,in some embodiments. Optimized read voltage levels for the flash memoryare determined based on a gradient between bit errors at different readvoltage levels, in further embodiments. FIGS. 1A-1D illustrate storagearrays in some embodiments. FIGS. 2A-2G show storage clusters withstorage nodes in some embodiments. FIGS. 3A and 3B show storage systemswith cloud and local resources in some embodiments. FIGS. 4-7 showdetails of read voltage threshold optimization mechanisms that are basedon tracking bit flips and are applicable to various storage systems thathave flash memory. FIGS. 9 and 10 show details of read voltage thresholdoptimization mechanisms that are based on determining bit errors and agradient and are applicable to various storage systems that have flashmemory.

FIG. 1A illustrates an example system for data storage, in accordancewith some implementations. System 100 (also referred to as “storagesystem” herein) includes numerous elements for purposes of illustrationrather than limitation. It may be noted that system 100 may include thesame, more, or fewer elements configured in the same or different mannerin other implementations.

System 100 includes a number of computing devices 164A-B. Computingdevices (also referred to as “client devices” herein) may be embodied,for example, a server in a data center, a workstation, a personalcomputer, a notebook, or the like. Computing devices 164A-B may becoupled for data communications to one or more storage arrays 102A-Bthrough a storage area network (‘SAN’) 158 or a local area network(‘LAN’) 160.

The SAN 158 may be implemented with a variety of data communicationsfabrics, devices, and protocols. For example, the fabrics for SAN 158may include Fibre Channel, Ethernet, Infiniband, Serial Attached SmallComputer System Interface (‘SAS’), or the like. Data communicationsprotocols for use with SAN 158 may include Advanced TechnologyAttachment (‘ATA’), Fibre Channel Protocol, Small Computer SystemInterface (‘SCSI’), Internet Small Computer System Interface (‘SCSI’),HyperSCSI, Non-Volatile Memory Express (‘NVMe’) over Fabrics, or thelike. It may be noted that SAN 158 is provided for illustration, ratherthan limitation. Other data communication couplings may be implementedbetween computing devices 164A-B and storage arrays 102A-B.

The LAN 160 may also be implemented with a variety of fabrics, devices,and protocols. For example, the fabrics for LAN 160 may include Ethernet(802.3), wireless (802.11), or the like. Data communication protocolsfor use in LAN 160 may include Transmission Control Protocol (‘TCP’),User Datagram Protocol (‘UDP’), Internet Protocol (‘IP’), HyperTextTransfer Protocol (‘HTTP’), Wireless Access Protocol (‘WAP’), HandheldDevice Transport Protocol (‘HDTP’), Session Initiation Protocol (‘SIP’),Real Time Protocol (‘RTP’), or the like.

Storage arrays 102A-B may provide persistent data storage for thecomputing devices 164A-B. Storage array 102A may be contained in achassis (not shown), and storage array 102B may be contained in anotherchassis (not shown), in implementations. Storage array 102A and 102B mayinclude one or more storage array controllers 110A-D (also referred toas “controller” herein). A storage array controller 110A-D may beembodied as a module of automated computing machinery comprisingcomputer hardware, computer software, or a combination of computerhardware and software. In some implementations, the storage arraycontrollers 110A-D may be configured to carry out various storage tasks.Storage tasks may include writing data received from the computingdevices 164A-B to storage array 102A-B, erasing data from storage array102A-B, retrieving data from storage array 102A-B and providing data tocomputing devices 164A-B, monitoring and reporting of disk utilizationand performance, performing redundancy operations, such as RedundantArray of Independent Drives (‘RAID’) or RAID-like data redundancyoperations, compressing data, encrypting data, and so forth.

Storage array controller 110A-D may be implemented in a variety of ways,including as a Field Programmable Gate Array (‘FPGA’), a ProgrammableLogic Chip (‘PLC’), an Application Specific Integrated Circuit (‘ASIC’),System-on-Chip (‘SOC’), or any computing device that includes discretecomponents such as a processing device, central processing unit,computer memory, or various adapters. Storage array controller 110A-Dmay include, for example, a data communications adapter configured tosupport communications via the SAN 158 or LAN 160. In someimplementations, storage array controller 110A-D may be independentlycoupled to the LAN 160. In implementations, storage array controller110A-D may include an I/O controller or the like that couples thestorage array controller 110A-D for data communications, through amidplane (not shown), to a persistent storage resource 170A-B (alsoreferred to as a “storage resource” herein). The persistent storageresource 170A-B main include any number of storage drives 171A-F (alsoreferred to as “storage devices” herein) and any number of non-volatileRandom Access Memory (‘NVRAM’) devices (not shown).

In some implementations, the NVRAM devices of a persistent storageresource 170A-B may be configured to receive, from the storage arraycontroller 110A-D, data to be stored in the storage drives 171A-F. Insome examples, the data may originate from computing devices 164A-B. Insome examples, writing data to the NVRAM device may be carried out morequickly than directly writing data to the storage drive 171A-F. Inimplementations, the storage array controller 110A-D may be configuredto utilize the NVRAM devices as a quickly accessible buffer for datadestined to be written to the storage drives 171A-F. Latency for writerequests using NVRAM devices as a buffer may be improved relative to asystem in which a storage array controller 110A-D writes data directlyto the storage drives 171A-F. In some implementations, the NVRAM devicesmay be implemented with computer memory in the form of high bandwidth,low latency RAM. The NVRAM device is referred to as “non-volatile”because the NVRAM device may receive or include a unique power sourcethat maintains the state of the RAM after main power loss to the NVRAMdevice. Such a power source may be a battery, one or more capacitors, orthe like. In response to a power loss, the NVRAM device may beconfigured to write the contents of the RAM to a persistent storage,such as the storage drives 171A-F.

In implementations, storage drive 171A-F may refer to any deviceconfigured to record data persistently, where “persistently” or“persistent” refers as to a device's ability to maintain recorded dataafter loss of power. In some implementations, storage drive 171A-F maycorrespond to non-disk storage media. For example, the storage drive171A-F may be one or more solid-state drives (‘SSDs’), flash memorybased storage, any type of solid-state non-volatile memory, or any othertype of non-mechanical storage device. In other implementations, storagedrive 171A-F may include may include mechanical or spinning hard disk,such as hard-disk drives (‘HDD’).

In some implementations, the storage array controllers 110A-D may beconfigured for offloading device management responsibilities fromstorage drive 171A-F in storage array 102A-B. For example, storage arraycontrollers 110A-D may manage control information that may describe thestate of one or more memory blocks in the storage drives 171A-F. Thecontrol information may indicate, for example, that a particular memoryblock has failed and should no longer be written to, that a particularmemory block contains boot code for a storage array controller 110A-D,the number of program-erase (‘P/E’) cycles that have been performed on aparticular memory block, the age of data stored in a particular memoryblock, the type of data that is stored in a particular memory block, andso forth. In some implementations, the control information may be storedwith an associated memory block as metadata. In other implementations,the control information for the storage drives 171A-F may be stored inone or more particular memory blocks of the storage drives 171A-F thatare selected by the storage array controller 110A-D. The selected memoryblocks may be tagged with an identifier indicating that the selectedmemory block contains control information. The identifier may beutilized by the storage array controllers 110A-D in conjunction withstorage drives 171A-F to quickly identify the memory blocks that containcontrol information. For example, the storage controllers 110A-D mayissue a command to locate memory blocks that contain controlinformation. It may be noted that control information may be so largethat parts of the control information may be stored in multiplelocations, that the control information may be stored in multiplelocations for purposes of redundancy, for example, or that the controlinformation may otherwise be distributed across multiple memory blocksin the storage drive 171A-F.

In implementations, storage array controllers 110A-D may offload devicemanagement responsibilities from storage drives 171A-F of storage array102A-B by retrieving, from the storage drives 171A-F, controlinformation describing the state of one or more memory blocks in thestorage drives 171A-F. Retrieving the control information from thestorage drives 171A-F may be carried out, for example, by the storagearray controller 110A-D querying the storage drives 171A-F for thelocation of control information for a particular storage drive 171A-F.The storage drives 171A-F may be configured to execute instructions thatenable the storage drive 171A-F to identify the location of the controlinformation. The instructions may be executed by a controller (notshown) associated with or otherwise located on the storage drive 171A-Fand may cause the storage drive 171A-F to scan a portion of each memoryblock to identify the memory blocks that store control information forthe storage drives 171A-F. The storage drives 171A-F may respond bysending a response message to the storage array controller 110A-D thatincludes the location of control information for the storage drive171A-F. Responsive to receiving the response message, storage arraycontrollers 110A-D may issue a request to read data stored at theaddress associated with the location of control information for thestorage drives 171A-F.

In other implementations, the storage array controllers 110A-D mayfurther offload device management responsibilities from storage drives171A-F by performing, in response to receiving the control information,a storage drive management operation. A storage drive managementoperation may include, for example, an operation that is typicallyperformed by the storage drive 171A-F (e.g., the controller (not shown)associated with a particular storage drive 171A-F). A storage drivemanagement operation may include, for example, ensuring that data is notwritten to failed memory blocks within the storage drive 171A-F,ensuring that data is written to memory blocks within the storage drive171A-F in such a way that adequate wear leveling is achieved, and soforth.

In implementations, storage array 102A-B may implement two or morestorage array controllers 110A-D. For example, storage array 102A mayinclude storage array controllers 110A and storage array controllers110B. At a given instance, a single storage array controller 110A-D(e.g., storage array controller 110A) of a storage system 100 may bedesignated with primary status (also referred to as “primary controller”herein), and other storage array controllers 110A-D (e.g., storage arraycontroller 110A) may be designated with secondary status (also referredto as “secondary controller” herein). The primary controller may haveparticular rights, such as permission to alter data in persistentstorage resource 170A-B (e.g., writing data to persistent storageresource 170A-B). At least some of the rights of the primary controllermay supersede the rights of the secondary controller. For instance, thesecondary controller may not have permission to alter data in persistentstorage resource 170A-B when the primary controller has the right. Thestatus of storage array controllers 110A-D may change. For example,storage array controller 110A may be designated with secondary status,and storage array controller 110B may be designated with primary status.

In some implementations, a primary controller, such as storage arraycontroller 110A, may serve as the primary controller for one or morestorage arrays 102A-B, and a second controller, such as storage arraycontroller 110B, may serve as the secondary controller for the one ormore storage arrays 102A-B. For example, storage array controller 110Amay be the primary controller for storage array 102A and storage array102B, and storage array controller 110B may be the secondary controllerfor storage array 102A and 102B. In some implementations, storage arraycontrollers 110C and 110D (also referred to as “storage processingmodules”) may neither have primary or secondary status. Storage arraycontrollers 110C and 110D, implemented as storage processing modules,may act as a communication interface between the primary and secondarycontrollers (e.g., storage array controllers 110A and 110B,respectively) and storage array 102B. For example, storage arraycontroller 110A of storage array 102A may send a write request, via SAN158, to storage array 102B. The write request may be received by bothstorage array controllers 110C and 110D of storage array 102B. Storagearray controllers 110C and 110D facilitate the communication, e.g., sendthe write request to the appropriate storage drive 171A-F. It may benoted that in some implementations storage processing modules may beused to increase the number of storage drives controlled by the primaryand secondary controllers.

In implementations, storage array controllers 110A-D are communicativelycoupled, via a midplane (not shown), to one or more storage drives171A-F and to one or more NVRAM devices (not shown) that are included aspart of a storage array 102A-B. The storage array controllers 110A-D maybe coupled to the midplane via one or more data communication links andthe midplane may be coupled to the storage drives 171A-F and the NVRAMdevices via one or more data communications links. The datacommunications links described herein are collectively illustrated bydata communications links 108A-D and may include a Peripheral ComponentInterconnect Express (‘PCIe’) bus, for example.

FIG. 1B illustrates an example system for data storage, in accordancewith some implementations. Storage array controller 101 illustrated inFIG. 1B may similar to the storage array controllers 110A-D describedwith respect to FIG. 1A. In one example, storage array controller 101may be similar to storage array controller 110A or storage arraycontroller 110B. Storage array controller 101 includes numerous elementsfor purposes of illustration rather than limitation. It may be notedthat storage array controller 101 may include the same, more, or fewerelements configured in the same or different manner in otherimplementations. It may be noted that elements of FIG. 1A may beincluded below to help illustrate features of storage array controller101.

Storage array controller 101 may include one or more processing devices104 and random access memory (‘RAM’) 111. Processing device 104 (orcontroller 101) represents one or more general-purpose processingdevices such as a microprocessor, central processing unit, or the like.More particularly, the processing device 104 (or controller 101) may bea complex instruction set computing (‘CISC’) microprocessor, reducedinstruction set computing (‘RISC’) microprocessor, very long instructionword (‘VLIW’) microprocessor, or a processor implementing otherinstruction sets or processors implementing a combination of instructionsets. The processing device 104 (or controller 101) may also be one ormore special-purpose processing devices such as an application specificintegrated circuit (‘ASIC’), a field programmable gate array (‘FPGA’), adigital signal processor (‘DSP’), network processor, or the like.

The processing device 104 may be connected to the RAM 111 via a datacommunications link 106, which may be embodied as a high speed memorybus such as a Double-Data Rate 4 (‘DDR4’) bus. Stored in RAM 111 is anoperating system 112. In some implementations, instructions 113 arestored in RAM 111. Instructions 113 may include computer programinstructions for performing operations in in a direct-mapped flashstorage system. In one embodiment, a direct-mapped flash storage systemis one that that addresses data blocks within flash drives directly andwithout an address translation performed by the storage controllers ofthe flash drives.

In implementations, storage array controller 101 includes one or morehost bus adapters 103A-C that are coupled to the processing device 104via a data communications link 105A-C. In implementations, host busadapters 103A-C may be computer hardware that connects a host system(e.g., the storage array controller) to other network and storagearrays. In some examples, host bus adapters 103A-C may be a FibreChannel adapter that enables the storage array controller 101 to connectto a SAN, an Ethernet adapter that enables the storage array controller101 to connect to a LAN, or the like. Host bus adapters 103A-C may becoupled to the processing device 104 via a data communications link105A-C such as, for example, a PCIe bus.

In implementations, storage array controller 101 may include a host busadapter 114 that is coupled to an expander 115. The expander 115 may beused to attach a host system to a larger number of storage drives. Theexpander 115 may, for example, be a SAS expander utilized to enable thehost bus adapter 114 to attach to storage drives in an implementationwhere the host bus adapter 114 is embodied as a SAS controller.

In implementations, storage array controller 101 may include a switch116 coupled to the processing device 104 via a data communications link109. The switch 116 may be a computer hardware device that can createmultiple endpoints out of a single endpoint, thereby enabling multipledevices to share a single endpoint. The switch 116 may, for example, bea PCIe switch that is coupled to a PCIe bus (e.g., data communicationslink 109) and presents multiple PCIe connection points to the midplane.

In implementations, storage array controller 101 includes a datacommunications link 107 for coupling the storage array controller 101 toother storage array controllers. In some examples, data communicationslink 107 may be a QuickPath Interconnect (QPI) interconnect.

A traditional storage system that uses traditional flash drives mayimplement a process across the flash drives that are part of thetraditional storage system. For example, a higher level process of thestorage system may initiate and control a process across the flashdrives. However, a flash drive of the traditional storage system mayinclude its own storage controller that also performs the process. Thus,for the traditional storage system, a higher level process (e.g.,initiated by the storage system) and a lower level process (e.g.,initiated by a storage controller of the storage system) may both beperformed.

To resolve various deficiencies of a traditional storage system,operations may be performed by higher level processes and not by thelower level processes. For example, the flash storage system may includeflash drives that do not include storage controllers that provide theprocess. Thus, the operating system of the flash storage system itselfmay initiate and control the process. This may be accomplished by adirect-mapped flash storage system that addresses data blocks within theflash drives directly and without an address translation performed bythe storage controllers of the flash drives.

The operating system of the flash storage system may identify andmaintain a list of allocation units across multiple flash drives of theflash storage system. The allocation units may be entire erase blocks ormultiple erase blocks. The operating system may maintain a map oraddress range that directly maps addresses to erase blocks of the flashdrives of the flash storage system.

Direct mapping to the erase blocks of the flash drives may be used torewrite data and erase data. For example, the operations may beperformed on one or more allocation units that include a first data anda second data where the first data is to be retained and the second datais no longer being used by the flash storage system. The operatingsystem may initiate the process to write the first data to new locationswithin other allocation units and erasing the second data and markingthe allocation units as being available for use for subsequent data.Thus, the process may only be performed by the higher level operatingsystem of the flash storage system without an additional lower levelprocess being performed by controllers of the flash drives.

Advantages of the process being performed only by the operating systemof the flash storage system include increased reliability of the flashdrives of the flash storage system as unnecessary or redundant writeoperations are not being performed during the process. One possiblepoint of novelty here is the concept of initiating and controlling theprocess at the operating system of the flash storage system. Inaddition, the process can be controlled by the operating system acrossmultiple flash drives. This is contrast to the process being performedby a storage controller of a flash drive.

A storage system can consist of two storage array controllers that sharea set of drives for failover purposes, or it could consist of a singlestorage array controller that provides a storage service that utilizesmultiple drives, or it could consist of a distributed network of storagearray controllers each with some number of drives or some amount ofFlash storage where the storage array controllers in the networkcollaborate to provide a complete storage service and collaborate onvarious aspects of a storage service including storage allocation andgarbage collection.

FIG. 1C illustrates a third example system 117 for data storage inaccordance with some implementations. System 117 (also referred to as“storage system” herein) includes numerous elements for purposes ofillustration rather than limitation. It may be noted that system 117 mayinclude the same, more, or fewer elements configured in the same ordifferent manner in other implementations.

In one embodiment, system 117 includes a dual Peripheral ComponentInterconnect (‘PCI’) flash storage device 118 with separatelyaddressable fast write storage. System 117 may include a storagecontroller 119. In one embodiment, storage controller 119A-D may be aCPU, ASIC, FPGA, or any other circuitry that may implement controlstructures necessary according to the present disclosure. In oneembodiment, system 117 includes flash memory devices (e.g., includingflash memory devices 120 a-n), operatively coupled to various channelsof the storage device controller 119. Flash memory devices 120 a-n, maybe presented to the controller 119A-D as an addressable collection ofFlash pages, erase blocks, and/or control elements sufficient to allowthe storage device controller 119A-D to program and retrieve variousaspects of the Flash. In one embodiment, storage device controller119A-D may perform operations on flash memory devices 120 a-n includingstoring and retrieving data content of pages, arranging and erasing anyblocks, tracking statistics related to the use and reuse of Flash memorypages, erase blocks, and cells, tracking and predicting error codes andfaults within the Flash memory, controlling voltage levels associatedwith programming and retrieving contents of Flash cells, etc.

In one embodiment, system 117 may include RAM 121 to store separatelyaddressable fast-write data. In one embodiment, RAM 121 may be one ormore separate discrete devices. In another embodiment, RAM 121 may beintegrated into storage device controller 119A-D or multiple storagedevice controllers. The RAM 121 may be utilized for other purposes aswell, such as temporary program memory for a processing device (e.g., aCPU) in the storage device controller 119.

In one embodiment, system 117 may include a stored energy device 122,such as a rechargeable battery or a capacitor. Stored energy device 122may store energy sufficient to power the storage device controller 119,some amount of the RAM (e.g., RAM 121), and some amount of Flash memory(e.g., Flash memory 120 a-120 n) for sufficient time to write thecontents of RAM to Flash memory. In one embodiment, storage devicecontroller 119A-D may write the contents of RAM to Flash Memory if thestorage device controller detects loss of external power.

In one embodiment, system 117 includes two data communications links 123a, 123 b. In one embodiment, data communications links 123 a, 123 b maybe PCI interfaces. In another embodiment, data communications links 123a, 123 b may be based on other communications standards (e.g.,HyperTransport, InfiniBand, etc.). Data communications links 123 a, 123b may be based on non-volatile memory express (‘NVMe’) or NVMe overfabrics (‘NVMf’) specifications that allow external connection to thestorage device controller 119A-D from other components in the storagesystem 117. It should be noted that data communications links may beinterchangeably referred to herein as PCI buses for convenience.

System 117 may also include an external power source (not shown), whichmay be provided over one or both data communications links 123 a, 123 b,or which may be provided separately. An alternative embodiment includesa separate Flash memory (not shown) dedicated for use in storing thecontent of RAM 121. The storage device controller 119A-D may present alogical device over a PCI bus which may include an addressablefast-write logical device, or a distinct part of the logical addressspace of the storage device 118, which may be presented as PCI memory oras persistent storage. In one embodiment, operations to store into thedevice are directed into the RAM 121. On power failure, the storagedevice controller 119A-D may write stored content associated with theaddressable fast-write logical storage to Flash memory (e.g., Flashmemory 120 a-n) for long-term persistent storage.

In one embodiment, the logical device may include some presentation ofsome or all of the content of the Flash memory devices 120 a-n, wherethat presentation allows a storage system including a storage device 118(e.g., storage system 117) to directly address Flash memory pages anddirectly reprogram erase blocks from storage system components that areexternal to the storage device through the PCI bus. The presentation mayalso allow one or more of the external components to control andretrieve other aspects of the Flash memory including some or all of:tracking statistics related to use and reuse of Flash memory pages,erase blocks, and cells across all the Flash memory devices; trackingand predicting error codes and faults within and across the Flash memorydevices; controlling voltage levels associated with programming andretrieving contents of Flash cells; etc.

In one embodiment, the stored energy device 122 may be sufficient toensure completion of in-progress operations to the Flash memory devices120 a-120 n stored energy device 122 may power storage device controller119A-D and associated Flash memory devices (e.g., 120 a-n) for thoseoperations, as well as for the storing of fast-write RAM to Flashmemory. Stored energy device 122 may be used to store accumulatedstatistics and other parameters kept and tracked by the Flash memorydevices 120 a-n and/or the storage device controller 119. Separatecapacitors or stored energy devices (such as smaller capacitors near orembedded within the Flash memory devices themselves) may be used forsome or all of the operations described herein.

Various schemes may be used to track and optimize the life span of thestored energy component, such as adjusting voltage levels over time,partially discharging the storage energy device 122 to measurecorresponding discharge characteristics, etc. If the available energydecreases over time, the effective available capacity of the addressablefast-write storage may be decreased to ensure that it can be writtensafely based on the currently available stored energy.

FIG. 1D illustrates a third example system 124 for data storage inaccordance with some implementations. In one embodiment, system 124includes storage controllers 125 a, 125 b. In one embodiment, storagecontrollers 125 a, 125 b are operatively coupled to Dual PCI storagedevices 119 a, 119 b and 119 c, 119 d, respectively. Storage controllers125 a, 125 b may be operatively coupled (e.g., via a storage network130) to some number of host computers 127 a-n.

In one embodiment, two storage controllers (e.g., 125 a and 125 b)provide storage services, such as a SCS) block storage array, a fileserver, an object server, a database or data analytics service, etc. Thestorage controllers 125 a, 125 b may provide services through somenumber of network interfaces (e.g., 126 a-d) to host computers 127 a-noutside of the storage system 124. Storage controllers 125 a, 125 b mayprovide integrated services or an application entirely within thestorage system 124, forming a converged storage and compute system. Thestorage controllers 125 a, 125 b may utilize the fast write memorywithin or across storage devices 119 a-d to journal in progressoperations to ensure the operations are not lost on a power failure,storage controller removal, storage controller or storage systemshutdown, or some fault of one or more software or hardware componentswithin the storage system 124.

In one embodiment, controllers 125 a, 125 b operate as PCI masters toone or the other PCI buses 128 a, 128 b. In another embodiment, 128 aand 128 b may be based on other communications standards (e.g.,HyperTransport, InfiniBand, etc.). Other storage system embodiments mayoperate storage controllers 125 a, 125 b as multi-masters for both PCIbuses 128 a, 128 b. Alternately, a PCINVMe/NVMf switching infrastructureor fabric may connect multiple storage controllers. Some storage systemembodiments may allow storage devices to communicate with each otherdirectly rather than communicating only with storage controllers. In oneembodiment, a storage device controller 119 a may be operable underdirection from a storage controller 125 a to synthesize and transferdata to be stored into Flash memory devices from data that has beenstored in RAM (e.g., RAM 121 of FIG. 1C). For example, a recalculatedversion of RAM content may be transferred after a storage controller hasdetermined that an operation has fully committed across the storagesystem, or when fast-write memory on the device has reached a certainused capacity, or after a certain amount of time, to ensure improvesafety of the data or to release addressable fast-write capacity forreuse. This mechanism may be used, for example, to avoid a secondtransfer over a bus (e.g., 128 a, 128 b) from the storage controllers125 a, 125 b. In one embodiment, a recalculation may include compressingdata, attaching indexing or other metadata, combining multiple datasegments together, performing erasure code calculations, etc.

In one embodiment, under direction from a storage controller 125 a, 125b, a storage device controller 119 a, 119 b may be operable to calculateand transfer data to other storage devices from data stored in RAM(e.g., RAM 121 of FIG. 1C) without involvement of the storagecontrollers 125 a, 125 b. This operation may be used to mirror datastored in one controller 125 a to another controller 125 b, or it couldbe used to offload compression, data aggregation, and/or erasure codingcalculations and transfers to storage devices to reduce load on storagecontrollers or the storage controller interface 129 a, 129 b to the PCIbus 128 a, 128 b.

A storage device controller 119A-D may include mechanisms forimplementing high availability primitives for use by other parts of astorage system external to the Dual PCI storage device 118. For example,reservation or exclusion primitives may be provided so that, in astorage system with two storage controllers providing a highly availablestorage service, one storage controller may prevent the other storagecontroller from accessing or continuing to access the storage device.This could be used, for example, in cases where one controller detectsthat the other controller is not functioning properly or where theinterconnect between the two storage controllers may itself not befunctioning properly.

In one embodiment, a storage system for use with Dual PCI direct mappedstorage devices with separately addressable fast write storage includessystems that manage erase blocks or groups of erase blocks as allocationunits for storing data on behalf of the storage service, or for storingmetadata (e.g., indexes, logs, etc.) associated with the storageservice, or for proper management of the storage system itself. Flashpages, which may be a few kilobytes in size, may be written as dataarrives or as the storage system is to persist data for long intervalsof time (e.g., above a defined threshold of time). To commit data morequickly, or to reduce the number of writes to the Flash memory devices,the storage controllers may first write data into the separatelyaddressable fast write storage on one more storage devices.

In one embodiment, the storage controllers 125 a, 125 b may initiate theuse of erase blocks within and across storage devices (e.g., 118) inaccordance with an age and expected remaining lifespan of the storagedevices, or based on other statistics. The storage controllers 125 a,125 b may initiate garbage collection and data migration data betweenstorage devices in accordance with pages that are no longer needed aswell as to manage Flash page and erase block lifespans and to manageoverall system performance.

In one embodiment, the storage system 124 may utilize mirroring and/orerasure coding schemes as part of storing data into addressable fastwrite storage and/or as part of writing data into allocation unitsassociated with erase blocks. Erasure codes may be used across storagedevices, as well as within erase blocks or allocation units, or withinand across Flash memory devices on a single storage device, to provideredundancy against single or multiple storage device failures or toprotect against internal corruptions of Flash memory pages resultingfrom Flash memory operations or from degradation of Flash memory cells.Mirroring and erasure coding at various levels may be used to recoverfrom multiple types of failures that occur separately or in combination.

The embodiments depicted with reference to FIGS. 2A-G illustrate astorage cluster that stores user data, such as user data originatingfrom one or more user or client systems or other sources external to thestorage cluster. The storage cluster distributes user data acrossstorage nodes housed within a chassis, or across multiple chassis, usingerasure coding and redundant copies of metadata. Erasure coding refersto a method of data protection or reconstruction in which data is storedacross a set of different locations, such as disks, storage nodes orgeographic locations. Flash memory is one type of solid-state memorythat may be integrated with the embodiments, although the embodimentsmay be extended to other types of solid-state memory or other storagemedium, including non-solid state memory. Control of storage locationsand workloads are distributed across the storage locations in aclustered peer-to-peer system. Tasks such as mediating communicationsbetween the various storage nodes, detecting when a storage node hasbecome unavailable, and balancing I/Os (inputs and outputs) across thevarious storage nodes, are all handled on a distributed basis. Data islaid out or distributed across multiple storage nodes in data fragmentsor stripes that support data recovery in some embodiments. Ownership ofdata can be reassigned within a cluster, independent of input and outputpatterns. This architecture described in more detail below allows astorage node in the cluster to fail, with the system remainingoperational, since the data can be reconstructed from other storagenodes and thus remain available for input and output operations. Invarious embodiments, a storage node may be referred to as a clusternode, a blade, or a server.

The storage cluster may be contained within a chassis, i.e., anenclosure housing one or more storage nodes. A mechanism to providepower to each storage node, such as a power distribution bus, and acommunication mechanism, such as a communication bus that enablescommunication between the storage nodes are included within the chassis.The storage cluster can run as an independent system in one locationaccording to some embodiments. In one embodiment, a chassis contains atleast two instances of both the power distribution and the communicationbus which may be enabled or disabled independently. The internalcommunication bus may be an Ethernet bus, however, other technologiessuch as PCIe, InfiniBand, and others, are equally suitable. The chassisprovides a port for an external communication bus for enablingcommunication between multiple chassis, directly or through a switch,and with client systems. The external communication may use a technologysuch as Ethernet, InfiniBand, Fibre Channel, etc. In some embodiments,the external communication bus uses different communication bustechnologies for inter-chassis and client communication. If a switch isdeployed within or between chassis, the switch may act as a translationbetween multiple protocols or technologies. When multiple chassis areconnected to define a storage cluster, the storage cluster may beaccessed by a client using either proprietary interfaces or standardinterfaces such as network file system (‘NFS’), common internet filesystem (‘CIFS’), small computer system interface (‘SCSI’) or hypertexttransfer protocol (‘HTTP’). Translation from the client protocol mayoccur at the switch, chassis external communication bus or within eachstorage node. In some embodiments, multiple chassis may be coupled orconnected to each other through an aggregator switch. A portion and/orall of the coupled or connected chassis may be designated as a storagecluster. As discussed above, each chassis can have multiple blades, eachblade has a media access control (‘MAC’) address, but the storagecluster is presented to an external network as having a single clusterIP address and a single MAC address in some embodiments.

Each storage node may be one or more storage servers and each storageserver is connected to one or more non-volatile solid state memoryunits, which may be referred to as storage units or storage devices. Oneembodiment includes a single storage server in each storage node andbetween one to eight non-volatile solid state memory units, however thisone example is not meant to be limiting. The storage server may includea processor, DRAM and interfaces for the internal communication bus andpower distribution for each of the power buses. Inside the storage node,the interfaces and storage unit share a communication bus, e.g., PCIExpress, in some embodiments. The non-volatile solid state memory unitsmay directly access the internal communication bus interface through astorage node communication bus, or request the storage node to accessthe bus interface. The non-volatile solid state memory unit contains anembedded CPU, solid state storage controller, and a quantity of solidstate mass storage, e.g., between 2-32 terabytes (‘TB’) in someembodiments. An embedded volatile storage medium, such as DRAM, and anenergy reserve apparatus are included in the non-volatile solid statememory unit. In some embodiments, the energy reserve apparatus is acapacitor, super-capacitor, or battery that enables transferring asubset of DRAM contents to a stable storage medium in the case of powerloss. In some embodiments, the non-volatile solid state memory unit isconstructed with a storage class memory, such as phase change ormagnetoresistive random access memory (‘MRAM’) that substitutes for DRAMand enables a reduced power hold-up apparatus.

One of many features of the storage nodes and non-volatile solid statestorage is the ability to proactively rebuild data in a storage cluster.The storage nodes and non-volatile solid state storage can determinewhen a storage node or non-volatile solid state storage in the storagecluster is unreachable, independent of whether there is an attempt toread data involving that storage node or non-volatile solid statestorage. The storage nodes and non-volatile solid state storage thencooperate to recover and rebuild the data in at least partially newlocations. This constitutes a proactive rebuild, in that the systemrebuilds data without waiting until the data is needed for a read accessinitiated from a client system employing the storage cluster. These andfurther details of the storage memory and operation thereof arediscussed below.

FIG. 2A is a perspective view of a storage cluster 161, with multiplestorage nodes 150 and internal solid-state memory coupled to eachstorage node to provide network attached storage or storage areanetwork, in accordance with some embodiments. A network attachedstorage, storage area network, or a storage cluster, or other storagememory, could include one or more storage clusters 161, each having oneor more storage nodes 150, in a flexible and reconfigurable arrangementof both the physical components and the amount of storage memoryprovided thereby. The storage cluster 161 is designed to fit in a rack,and one or more racks can be set up and populated as desired for thestorage memory. The storage cluster 161 has a chassis 138 havingmultiple slots 142. It should be appreciated that chassis 138 may bereferred to as a housing, enclosure, or rack unit. In one embodiment,the chassis 138 has fourteen slots 142, although other numbers of slotsare readily devised. For example, some embodiments have four slots,eight slots, sixteen slots, thirty-two slots, or other suitable numberof slots. Each slot 142 can accommodate one storage node 150 in someembodiments. Chassis 138 includes flaps 148 that can be utilized tomount the chassis 138 on a rack. Fans 144 provide air circulation forcooling of the storage nodes 150 and components thereof, although othercooling components could be used, or an embodiment could be devisedwithout cooling components. A switch fabric 146 couples storage nodes150 within chassis 138 together and to a network for communication tothe memory. In an embodiment depicted in herein, the slots 142 to theleft of the switch fabric 146 and fans 144 are shown occupied by storagenodes 150, while the slots 142 to the right of the switch fabric 146 andfans 144 are empty and available for insertion of storage node 150 forillustrative purposes. This configuration is one example, and one ormore storage nodes 150 could occupy the slots 142 in various furtherarrangements. The storage node arrangements need not be sequential oradjacent in some embodiments. Storage nodes 150 are hot pluggable,meaning that a storage node 150 can be inserted into a slot 142 in thechassis 138, or removed from a slot 142, without stopping or poweringdown the system. Upon insertion or removal of storage node 150 from slot142, the system automatically reconfigures in order to recognize andadapt to the change. Reconfiguration, in some embodiments, includesrestoring redundancy and/or rebalancing data or load.

Each storage node 150 can have multiple components. In the embodimentshown here, the storage node 150 includes a printed circuit board 159populated by a CPU 156, i.e., processor, a memory 154 coupled to the CPU156, and a non-volatile solid state storage 152 coupled to the CPU 156,although other mountings and/or components could be used in furtherembodiments. The memory 154 has instructions which are executed by theCPU 156 and/or data operated on by the CPU 156. As further explainedbelow, the non-volatile solid state storage 152 includes flash or, infurther embodiments, other types of solid-state memory.

Referring to FIG. 2A, storage cluster 161 is scalable, meaning thatstorage capacity with non-uniform storage sizes is readily added, asdescribed above. One or more storage nodes 150 can be plugged into orremoved from each chassis and the storage cluster self-configures insome embodiments. Plug-in storage nodes 150, whether installed in achassis as delivered or later added, can have different sizes. Forexample, in one embodiment a storage node 150 can have any multiple of 4TB, e.g., 8 TB, 12 TB, 16 TB, 32 TB, etc. In further embodiments, astorage node 150 could have any multiple of other storage amounts orcapacities. Storage capacity of each storage node 150 is broadcast, andinfluences decisions of how to stripe the data. For maximum storageefficiency, an embodiment can self-configure as wide as possible in thestripe, subject to a predetermined requirement of continued operationwith loss of up to one, or up to two, non-volatile solid state storageunits 152 or storage nodes 150 within the chassis.

FIG. 2B is a block diagram showing a communications interconnect 173 andpower distribution bus 172 coupling multiple storage nodes 150.Referring back to FIG. 2A, the communications interconnect 173 can beincluded in or implemented with the switch fabric 146 in someembodiments. Where multiple storage clusters 161 occupy a rack, thecommunications interconnect 173 can be included in or implemented with atop of rack switch, in some embodiments. As illustrated in FIG. 2B,storage cluster 161 is enclosed within a single chassis 138. Externalport 176 is coupled to storage nodes 150 through communicationsinterconnect 173, while external port 174 is coupled directly to astorage node. External power port 178 is coupled to power distributionbus 172. Storage nodes 150 may include varying amounts and differingcapacities of non-volatile solid state storage 152 as described withreference to FIG. 2A. In addition, one or more storage nodes 150 may bea compute only storage node as illustrated in FIG. 2B. Authorities 168are implemented on the non-volatile solid state storages 152, forexample as lists or other data structures stored in memory. In someembodiments the authorities are stored within the non-volatile solidstate storage 152 and supported by software executing on a controller orother processor of the non-volatile solid state storage 152. In afurther embodiment, authorities 168 are implemented on the storage nodes150, for example as lists or other data structures stored in the memory154 and supported by software executing on the CPU 156 of the storagenode 150. Authorities 168 control how and where data is stored in thenon-volatile solid state storages 152 in some embodiments. This controlassists in determining which type of erasure coding scheme is applied tothe data, and which storage nodes 150 have which portions of the data.Each authority 168 may be assigned to a non-volatile solid state storage152. Each authority may control a range of inode numbers, segmentnumbers, or other data identifiers which are assigned to data by a filesystem, by the storage nodes 150, or by the non-volatile solid statestorage 152, in various embodiments.

Every piece of data, and every piece of metadata, has redundancy in thesystem in some embodiments. In addition, every piece of data and everypiece of metadata has an owner, which may be referred to as anauthority. If that authority is unreachable, for example through failureof a storage node, there is a plan of succession for how to find thatdata or that metadata. In various embodiments, there are redundantcopies of authorities 168. Authorities 168 have a relationship tostorage nodes 150 and non-volatile solid state storage 152 in someembodiments. Each authority 168, covering a range of data segmentnumbers or other identifiers of the data, may be assigned to a specificnon-volatile solid state storage 152. In some embodiments theauthorities 168 for all of such ranges are distributed over thenon-volatile solid state storages 152 of a storage cluster. Each storagenode 150 has a network port that provides access to the non-volatilesolid state storage(s) 152 of that storage node 150. Data can be storedin a segment, which is associated with a segment number and that segmentnumber is an indirection for a configuration of a RAID (redundant arrayof independent disks) stripe in some embodiments. The assignment and useof the authorities 168 thus establishes an indirection to data.Indirection may be referred to as the ability to reference dataindirectly, in this case via an authority 168, in accordance with someembodiments. A segment identifies a set of non-volatile solid statestorage 152 and a local identifier into the set of non-volatile solidstate storage 152 that may contain data. In some embodiments, the localidentifier is an offset into the device and may be reused sequentiallyby multiple segments. In other embodiments the local identifier isunique for a specific segment and never reused. The offsets in thenon-volatile solid state storage 152 are applied to locating data forwriting to or reading from the non-volatile solid state storage 152 (inthe form of a RAID stripe). Data is striped across multiple units ofnon-volatile solid state storage 152, which may include or be differentfrom the non-volatile solid state storage 152 having the authority 168for a particular data segment.

If there is a change in where a particular segment of data is located,e.g., during a data move or a data reconstruction, the authority 168 forthat data segment should be consulted, at that non-volatile solid statestorage 152 or storage node 150 having that authority 168. In order tolocate a particular piece of data, embodiments calculate a hash valuefor a data segment or apply an inode number or a data segment number.The output of this operation points to a non-volatile solid statestorage 152 having the authority 168 for that particular piece of data.In some embodiments there are two stages to this operation. The firststage maps an entity identifier (ID), e.g., a segment number, inodenumber, or directory number to an authority identifier. This mapping mayinclude a calculation such as a hash or a bit mask. The second stage ismapping the authority identifier to a particular non-volatile solidstate storage 152, which may be done through an explicit mapping. Theoperation is repeatable, so that when the calculation is performed, theresult of the calculation repeatably and reliably points to a particularnon-volatile solid state storage 152 having that authority 168. Theoperation may include the set of reachable storage nodes as input. Ifthe set of reachable non-volatile solid state storage units changes theoptimal set changes. In some embodiments, the persisted value is thecurrent assignment (which is always true) and the calculated value isthe target assignment the cluster will attempt to reconfigure towards.This calculation may be used to determine the optimal non-volatile solidstate storage 152 for an authority in the presence of a set ofnon-volatile solid state storage 152 that are reachable and constitutethe same cluster. The calculation also determines an ordered set of peernon-volatile solid state storage 152 that will also record the authorityto non-volatile solid state storage mapping so that the authority may bedetermined even if the assigned non-volatile solid state storage isunreachable. A duplicate or substitute authority 168 may be consulted ifa specific authority 168 is unavailable in some embodiments.

With reference to FIGS. 2A and 2B, two of the many tasks of the CPU 156on a storage node 150 are to break up write data, and reassemble readdata. When the system has determined that data is to be written, theauthority 168 for that data is located as above. When the segment ID fordata is already determined the request to write is forwarded to thenon-volatile solid state storage 152 currently determined to be the hostof the authority 168 determined from the segment. The host CPU 156 ofthe storage node 150, on which the non-volatile solid state storage 152and corresponding authority 168 reside, then breaks up or shards thedata and transmits the data out to various non-volatile solid statestorage 152. The transmitted data is written as a data stripe inaccordance with an erasure coding scheme. In some embodiments, data isrequested to be pulled, and in other embodiments, data is pushed. Inreverse, when data is read, the authority 168 for the segment IDcontaining the data is located as described above. The host CPU 156 ofthe storage node 150 on which the non-volatile solid state storage 152and corresponding authority 168 reside requests the data from thenon-volatile solid state storage and corresponding storage nodes pointedto by the authority. In some embodiments the data is read from flashstorage as a data stripe. The host CPU 156 of storage node 150 thenreassembles the read data, correcting any errors (if present) accordingto the appropriate erasure coding scheme, and forwards the reassembleddata to the network. In further embodiments, some or all of these taskscan be handled in the non-volatile solid state storage 152. In someembodiments, the segment host requests the data be sent to storage node150 by requesting pages from storage and then sending the data to thestorage node making the original request.

In some systems, for example in UNIX-style file systems, data is handledwith an index node or inode, which specifies a data structure thatrepresents an object in a file system. The object could be a file or adirectory, for example. Metadata may accompany the object, as attributessuch as permission data and a creation timestamp, among otherattributes. A segment number could be assigned to all or a portion ofsuch an object in a file system. In other systems, data segments arehandled with a segment number assigned elsewhere. For purposes ofdiscussion, the unit of distribution is an entity, and an entity can bea file, a directory or a segment. That is, entities are units of data ormetadata stored by a storage system. Entities are grouped into setscalled authorities. Each authority has an authority owner, which is astorage node that has the exclusive right to update the entities in theauthority. In other words, a storage node contains the authority, andthat the authority, in turn, contains entities.

A segment is a logical container of data in accordance with someembodiments. A segment is an address space between medium address spaceand physical flash locations, i.e., the data segment number, are in thisaddress space. Segments may also contain meta-data, which enable dataredundancy to be restored (rewritten to different flash locations ordevices) without the involvement of higher level software. In oneembodiment, an internal format of a segment contains client data andmedium mappings to determine the position of that data. Each datasegment is protected, e.g., from memory and other failures, by breakingthe segment into a number of data and parity shards, where applicable.The data and parity shards are distributed, i.e., striped, acrossnon-volatile solid state storage 152 coupled to the host CPUs 156 (SeeFIGS. 2E and 2G) in accordance with an erasure coding scheme. Usage ofthe term segments refers to the container and its place in the addressspace of segments in some embodiments. Usage of the term stripe refersto the same set of shards as a segment and includes how the shards aredistributed along with redundancy or parity information in accordancewith some embodiments.

A series of address-space transformations takes place across an entirestorage system. At the top are the directory entries (file names) whichlink to an inode. Modes point into medium address space, where data islogically stored. Medium addresses may be mapped through a series ofindirect mediums to spread the load of large files, or implement dataservices like deduplication or snapshots. Medium addresses may be mappedthrough a series of indirect mediums to spread the load of large files,or implement data services like deduplication or snapshots. Segmentaddresses are then translated into physical flash locations. Physicalflash locations have an address range bounded by the amount of flash inthe system in accordance with some embodiments. Medium addresses andsegment addresses are logical containers, and in some embodiments use a128 bit or larger identifier so as to be practically infinite, with alikelihood of reuse calculated as longer than the expected life of thesystem. Addresses from logical containers are allocated in ahierarchical fashion in some embodiments. Initially, each non-volatilesolid state storage unit 152 may be assigned a range of address space.Within this assigned range, the non-volatile solid state storage 152 isable to allocate addresses without synchronization with othernon-volatile solid state storage 152.

Data and metadata is stored by a set of underlying storage layouts thatare optimized for varying workload patterns and storage devices. Theselayouts incorporate multiple redundancy schemes, compression formats andindex algorithms. Some of these layouts store information aboutauthorities and authority masters, while others store file metadata andfile data. The redundancy schemes include error correction codes thattolerate corrupted bits within a single storage device (such as a NANDflash chip), erasure codes that tolerate the failure of multiple storagenodes, and replication schemes that tolerate data center or regionalfailures. In some embodiments, low density parity check (‘LDPC’) code isused within a single storage unit. Reed-Solomon encoding is used withina storage cluster, and mirroring is used within a storage grid in someembodiments. Metadata may be stored using an ordered log structuredindex (such as a Log Structured Merge Tree), and large data may not bestored in a log structured layout.

In order to maintain consistency across multiple copies of an entity,the storage nodes agree implicitly on two things through calculations:(1) the authority that contains the entity, and (2) the storage nodethat contains the authority. The assignment of entities to authoritiescan be done by pseudo randomly assigning entities to authorities, bysplitting entities into ranges based upon an externally produced key, orby placing a single entity into each authority. Examples of pseudorandomschemes are linear hashing and the Replication Under Scalable Hashing(‘RUSH’) family of hashes, including Controlled Replication UnderScalable Hashing (‘CRUSH’). In some embodiments, pseudo-randomassignment is utilized only for assigning authorities to nodes becausethe set of nodes can change. The set of authorities cannot change so anysubjective function may be applied in these embodiments. Some placementschemes automatically place authorities on storage nodes, while otherplacement schemes rely on an explicit mapping of authorities to storagenodes. In some embodiments, a pseudorandom scheme is utilized to mapfrom each authority to a set of candidate authority owners. Apseudorandom data distribution function related to CRUSH may assignauthorities to storage nodes and create a list of where the authoritiesare assigned. Each storage node has a copy of the pseudorandom datadistribution function, and can arrive at the same calculation fordistributing, and later finding or locating an authority. Each of thepseudorandom schemes requires the reachable set of storage nodes asinput in some embodiments in order to conclude the same target nodes.Once an entity has been placed in an authority, the entity may be storedon physical devices so that no expected failure will lead to unexpecteddata loss. In some embodiments, rebalancing algorithms attempt to storethe copies of all entities within an authority in the same layout and onthe same set of machines.

Examples of expected failures include device failures, stolen machines,datacenter fires, and regional disasters, such as nuclear or geologicalevents. Different failures lead to different levels of acceptable dataloss. In some embodiments, a stolen storage node impacts neither thesecurity nor the reliability of the system, while depending on systemconfiguration, a regional event could lead to no loss of data, a fewseconds or minutes of lost updates, or even complete data loss.

In the embodiments, the placement of data for storage redundancy isindependent of the placement of authorities for data consistency. Insome embodiments, storage nodes that contain authorities do not containany persistent storage. Instead, the storage nodes are connected tonon-volatile solid state storage units that do not contain authorities.The communications interconnect between storage nodes and non-volatilesolid state storage units consists of multiple communicationtechnologies and has non-uniform performance and fault tolerancecharacteristics. In some embodiments, as mentioned above, non-volatilesolid state storage units are connected to storage nodes via PCIexpress, storage nodes are connected together within a single chassisusing Ethernet backplane, and chassis are connected together to form astorage cluster. Storage clusters are connected to clients usingEthernet or fiber channel in some embodiments. If multiple storageclusters are configured into a storage grid, the multiple storageclusters are connected using the Internet or other long-distancenetworking links, such as a “metro scale” link or private link that doesnot traverse the internet.

Authority owners have the exclusive right to modify entities, to migrateentities from one non-volatile solid state storage unit to anothernon-volatile solid state storage unit, and to add and remove copies ofentities. This allows for maintaining the redundancy of the underlyingdata. When an authority owner fails, is going to be decommissioned, oris overloaded, the authority is transferred to a new storage node.Transient failures make it non-trivial to ensure that all non-faultymachines agree upon the new authority location. The ambiguity thatarises due to transient failures can be achieved automatically by aconsensus protocol such as Paxos, hot-warm failover schemes, via manualintervention by a remote system administrator, or by a local hardwareadministrator (such as by physically removing the failed machine fromthe cluster, or pressing a button on the failed machine). In someembodiments, a consensus protocol is used, and failover is automatic. Iftoo many failures or replication events occur in too short a timeperiod, the system goes into a self-preservation mode and haltsreplication and data movement activities until an administratorintervenes in accordance with some embodiments.

As authorities are transferred between storage nodes and authorityowners update entities in their authorities, the system transfersmessages between the storage nodes and non-volatile solid state storageunits. With regard to persistent messages, messages that have differentpurposes are of different types. Depending on the type of the message,the system maintains different ordering and durability guarantees. Asthe persistent messages are being processed, the messages aretemporarily stored in multiple durable and non-durable storage hardwaretechnologies. In some embodiments, messages are stored in RAM, NVRAM andon NAND flash devices, and a variety of protocols are used in order tomake efficient use of each storage medium. Latency-sensitive clientrequests may be persisted in replicated NVRAM, and then later NAND,while background rebalancing operations are persisted directly to NAND.

Persistent messages are persistently stored prior to being transmitted.This allows the system to continue to serve client requests despitefailures and component replacement. Although many hardware componentscontain unique identifiers that are visible to system administrators,manufacturer, hardware supply chain and ongoing monitoring qualitycontrol infrastructure, applications running on top of theinfrastructure address virtualize addresses. These virtualized addressesdo not change over the lifetime of the storage system, regardless ofcomponent failures and replacements. This allows each component of thestorage system to be replaced over time without reconfiguration ordisruptions of client request processing, i.e., the system supportsnon-disruptive upgrades.

In some embodiments, the virtualized addresses are stored withsufficient redundancy. A continuous monitoring system correlateshardware and software status and the hardware identifiers. This allowsdetection and prediction of failures due to faulty components andmanufacturing details. The monitoring system also enables the proactivetransfer of authorities and entities away from impacted devices beforefailure occurs by removing the component from the critical path in someembodiments.

FIG. 2C is a multiple level block diagram, showing contents of a storagenode 150 and contents of a non-volatile solid state storage 152 of thestorage node 150. Data is communicated to and from the storage node 150by a network interface controller (‘NIC’) 202 in some embodiments. Eachstorage node 150 has a CPU 156, and one or more non-volatile solid statestorage 152, as discussed above. Moving down one level in FIG. 2C, eachnon-volatile solid state storage 152 has a relatively fast non-volatilesolid state memory, such as nonvolatile random access memory (‘NVRAM’)204, and flash memory 206. In some embodiments, NVRAM 204 may be acomponent that does not require program/erase cycles (DRAM, MRAM, PCM),and can be a memory that can support being written vastly more oftenthan the memory is read from. Moving down another level in FIG. 2C, theNVRAM 204 is implemented in one embodiment as high speed volatilememory, such as dynamic random access memory (DRAM) 216, backed up byenergy reserve 218. Energy reserve 218 provides sufficient electricalpower to keep the DRAM 216 powered long enough for contents to betransferred to the flash memory 206 in the event of power failure. Insome embodiments, energy reserve 218 is a capacitor, super-capacitor,battery, or other device, that supplies a suitable supply of energysufficient to enable the transfer of the contents of DRAM 216 to astable storage medium in the case of power loss. The flash memory 206 isimplemented as multiple flash dies 222, which may be referred to aspackages of flash dies 222 or an array of flash dies 222. It should beappreciated that the flash dies 222 could be packaged in any number ofways, with a single die per package, multiple dies per package (i.e.multichip packages), in hybrid packages, as bare dies on a printedcircuit board or other substrate, as encapsulated dies, etc. In theembodiment shown, the non-volatile solid state storage 152 has acontroller 212 or other processor, and an input output (I/O) port 210coupled to the controller 212. I/O port 210 is coupled to the CPU 156and/or the network interface controller 202 of the flash storage node150. Flash input output (I/O) port 220 is coupled to the flash dies 222,and a direct memory access unit (DMA) 214 is coupled to the controller212, the DRAM 216 and the flash dies 222. In the embodiment shown, theI/O port 210, controller 212, DMA unit 214 and flash I/O port 220 areimplemented on a programmable logic device (‘PLD’) 208, e.g., a fieldprogrammable gate array (FPGA). In this embodiment, each flash die 222has pages, organized as sixteen kB (kilobyte) pages 224, and a register226 through which data can be written to or read from the flash die 222.In further embodiments, other types of solid-state memory are used inplace of, or in addition to flash memory illustrated within flash die222.

Storage clusters 161, in various embodiments as disclosed herein, can becontrasted with storage arrays in general. The storage nodes 150 arepart of a collection that creates the storage cluster 161. Each storagenode 150 owns a slice of data and computing required to provide thedata. Multiple storage nodes 150 cooperate to store and retrieve thedata. Storage memory or storage devices, as used in storage arrays ingeneral, are less involved with processing and manipulating the data.Storage memory or storage devices in a storage array receive commands toread, write, or erase data. The storage memory or storage devices in astorage array are not aware of a larger system in which they areembedded, or what the data means. Storage memory or storage devices instorage arrays can include various types of storage memory, such as RAM,solid state drives, hard disk drives, etc. The storage units 152described herein have multiple interfaces active simultaneously andserving multiple purposes. In some embodiments, some of thefunctionality of a storage node 150 is shifted into a storage unit 152,transforming the storage unit 152 into a combination of storage unit 152and storage node 150. Placing computing (relative to storage data) intothe storage unit 152 places this computing closer to the data itself.The various system embodiments have a hierarchy of storage node layerswith different capabilities. By contrast, in a storage array, acontroller owns and knows everything about all of the data that thecontroller manages in a shelf or storage devices. In a storage cluster161, as described herein, multiple controllers in multiple storage units152 and/or storage nodes 150 cooperate in various ways (e.g., forerasure coding, data sharding, metadata communication and redundancy,storage capacity expansion or contraction, data recovery, and so on).

FIG. 2D shows a storage server environment, which uses embodiments ofthe storage nodes 150 and storage units 152 of FIGS. 2A-C. In thisversion, each storage unit 152 has a processor such as controller 212(see FIG. 2C), an FPGA (field programmable gate array), flash memory206, and NVRAM 204 (which is super-capacitor backed DRAM 216, see FIGS.2B and 2C) on a PCIe (peripheral component interconnect express) boardin a chassis 138 (see FIG. 2A). The storage unit 152 may be implementedas a single board containing storage, and may be the largest tolerablefailure domain inside the chassis. In some embodiments, up to twostorage units 152 may fail and the device will continue with no dataloss.

The physical storage is divided into named regions based on applicationusage in some embodiments. The NVRAM 204 is a contiguous block ofreserved memory in the storage unit 152 DRAM 216, and is backed by NANDflash. NVRAM 204 is logically divided into multiple memory regionswritten for two as spool (e.g., spool region). Space within the NVRAM204 spools is managed by each authority 168 independently. Each deviceprovides an amount of storage space to each authority 168. Thatauthority 168 further manages lifetimes and allocations within thatspace. Examples of a spool include distributed transactions or notions.When the primary power to a storage unit 152 fails, onboardsuper-capacitors provide a short duration of power hold up. During thisholdup interval, the contents of the NVRAM 204 are flushed to flashmemory 206. On the next power-on, the contents of the NVRAM 204 arerecovered from the flash memory 206.

As for the storage unit controller, the responsibility of the logical“controller” is distributed across each of the blades containingauthorities 168. This distribution of logical control is shown in FIG.2D as a host controller 242, mid-tier controller 244 and storage unitcontroller(s) 246. Management of the control plane and the storage planeare treated independently, although parts may be physically co-locatedon the same blade. Each authority 168 effectively serves as anindependent controller. Each authority 168 provides its own data andmetadata structures, its own background workers, and maintains its ownlifecycle.

FIG. 2E is a blade 252 hardware block diagram, showing a control plane254, compute and storage planes 256, 258, and authorities 168interacting with underlying physical resources, using embodiments of thestorage nodes 150 and storage units 152 of FIGS. 2A-C in the storageserver environment of FIG. 2D. The control plane 254 is partitioned intoa number of authorities 168 which can use the compute resources in thecompute plane 256 to run on any of the blades 252. The storage plane 258is partitioned into a set of devices, each of which provides access toflash 206 and NVRAM 204 resources.

In the compute and storage planes 256, 258 of FIG. 2E, the authorities168 interact with the underlying physical resources (i.e., devices).From the point of view of an authority 168, its resources are stripedover all of the physical devices. From the point of view of a device, itprovides resources to all authorities 168, irrespective of where theauthorities happen to run. Each authority 168 has allocated or has beenallocated one or more partitions 260 of storage memory in the storageunits 152, e.g. partitions 260 in flash memory 206 and NVRAM 204. Eachauthority 168 uses those allocated partitions 260 that belong to it, forwriting or reading user data. Authorities can be associated withdiffering amounts of physical storage of the system. For example, oneauthority 168 could have a larger number of partitions 260 or largersized partitions 260 in one or more storage units 152 than one or moreother authorities 168.

FIG. 2F depicts elasticity software layers in blades 252 of a storagecluster, in accordance with some embodiments. In the elasticitystructure, elasticity software is symmetric, i.e., each blade's computemodule 270 runs the three identical layers of processes depicted in FIG.2F. Storage managers 274 execute read and write requests from otherblades 252 for data and metadata stored in local storage unit 152 NVRAM204 and flash 206. Authorities 168 fulfill client requests by issuingthe necessary reads and writes to the blades 252 on whose storage units152 the corresponding data or metadata resides. Endpoints 272 parseclient connection requests received from switch fabric 146 supervisorysoftware, relay the client connection requests to the authorities 168responsible for fulfillment, and relay the authorities' 168 responses toclients. The symmetric three-layer structure enables the storagesystem's high degree of concurrency. Elasticity scales out efficientlyand reliably in these embodiments. In addition, elasticity implements aunique scale-out technique that balances work evenly across allresources regardless of client access pattern, and maximizes concurrencyby eliminating much of the need for inter-blade coordination thattypically occurs with conventional distributed locking.

Still referring to FIG. 2F, authorities 168 running in the computemodules 270 of a blade 252 perform the internal operations required tofulfill client requests. One feature of elasticity is that authorities168 are stateless, i.e., they cache active data and metadata in theirown blades' 252 DRAMs for fast access, but the authorities store everyupdate in their NVRAM 204 partitions on three separate blades 252 untilthe update has been written to flash 206. All the storage system writesto NVRAM 204 are in triplicate to partitions on three separate blades252 in some embodiments. With triple-mirrored NVRAM 204 and persistentstorage protected by parity and Reed-Solomon RAID checksums, the storagesystem can survive concurrent failure of two blades 252 with no loss ofdata, metadata, or access to either.

Because authorities 168 are stateless, they can migrate between blades252. Each authority 168 has a unique identifier. NVRAM 204 and flash 206partitions are associated with authorities' 168 identifiers, not withthe blades 252 on which they are running in some. Thus, when anauthority 168 migrates, the authority 168 continues to manage the samestorage partitions from its new location. When a new blade 252 isinstalled in an embodiment of the storage cluster, the systemautomatically rebalances load by: partitioning the new blade's 252storage for use by the system's authorities 168, migrating selectedauthorities 168 to the new blade 252, starting endpoints 272 on the newblade 252 and including them in the switch fabric's 146 clientconnection distribution algorithm.

From their new locations, migrated authorities 168 persist the contentsof their NVRAM 204 partitions on flash 206, process read and writerequests from other authorities 168, and fulfill the client requeststhat endpoints 272 direct to them. Similarly, if a blade 252 fails or isremoved, the system redistributes its authorities 168 among the system'sremaining blades 252. The redistributed authorities 168 continue toperform their original functions from their new locations.

FIG. 2G depicts authorities 168 and storage resources in blades 252 of astorage cluster, in accordance with some embodiments. Each authority 168is exclusively responsible for a partition of the flash 206 and NVRAM204 on each blade 252. The authority 168 manages the content andintegrity of its partitions independently of other authorities 168.Authorities 168 compress incoming data and preserve it temporarily intheir NVRAM 204 partitions, and then consolidate, RAID-protect, andpersist the data in segments of the storage in their flash 206partitions. As the authorities 168 write data to flash 206, storagemanagers 274 perform the necessary flash translation to optimize writeperformance and maximize media longevity. In the background, authorities168 “garbage collect,” or reclaim space occupied by data that clientshave made obsolete by overwriting the data. It should be appreciatedthat since authorities' 168 partitions are disjoint, there is no needfor distributed locking to execute client and writes or to performbackground functions.

The embodiments described herein may utilize various software,communication and/or networking protocols. In addition, theconfiguration of the hardware and/or software may be adjusted toaccommodate various protocols. For example, the embodiments may utilizeActive Directory, which is a database based system that providesauthentication, directory, policy, and other services in a WINDOWSenvironment. In these embodiments, LDAP (Lightweight Directory AccessProtocol) is one example application protocol for querying and modifyingitems in directory service providers such as Active Directory. In someembodiments, a network lock manager (‘NLM’) is utilized as a facilitythat works in cooperation with the Network File System (‘NFS’) toprovide a System V style of advisory file and record locking over anetwork. The Server Message Block (‘SMB’) protocol, one version of whichis also known as Common Internet File System (‘CIFS’), may be integratedwith the storage systems discussed herein. SMP operates as anapplication-layer network protocol typically used for providing sharedaccess to files, printers, and serial ports and miscellaneouscommunications between nodes on a network. SMB also provides anauthenticated inter-process communication mechanism. AMAZON™ S3 (SimpleStorage Service) is a web service offered by Amazon Web Services, andthe systems described herein may interface with Amazon S3 through webservices interfaces (REST (representational state transfer), SOAP(simple object access protocol), and BitTorrent). A RESTful API(application programming interface) breaks down a transaction to createa series of small modules. Each module addresses a particular underlyingpart of the transaction. The control or permissions provided with theseembodiments, especially for object data, may include utilization of anaccess control list (‘ACL’). The ACL is a list of permissions attachedto an object and the ACL specifies which users or system processes aregranted access to objects, as well as what operations are allowed ongiven objects. The systems may utilize Internet Protocol version 6(‘IPv6’), as well as IPv4, for the communications protocol that providesan identification and location system for computers on networks androutes traffic across the Internet. The routing of packets betweennetworked systems may include Equal-cost multi-path routing (‘ECMP’),which is a routing strategy where next-hop packet forwarding to a singledestination can occur over multiple “best paths” which tie for top placein routing metric calculations. Multi-path routing can be used inconjunction with most routing protocols, because it is a per-hopdecision limited to a single router. The software may supportMulti-tenancy, which is an architecture in which a single instance of asoftware application serves multiple customers. Each customer may bereferred to as a tenant. Tenants may be given the ability to customizesome parts of the application, but may not customize the application'scode, in some embodiments. The embodiments may maintain audit logs. Anaudit log is a document that records an event in a computing system. Inaddition to documenting what resources were accessed, audit log entriestypically include destination and source addresses, a timestamp, anduser login information for compliance with various regulations. Theembodiments may support various key management policies, such asencryption key rotation. In addition, the system may support dynamicroot passwords or some variation dynamically changing passwords.

FIG. 3A sets forth a diagram of a storage system 306 that is coupled fordata communications with a cloud services provider 302 in accordancewith some embodiments of the present disclosure. Although depicted inless detail, the storage system 306 depicted in FIG. 3A may be similarto the storage systems described above with reference to FIGS. 1A-1D andFIGS. 2A-2G. In some embodiments, the storage system 306 depicted inFIG. 3A may be embodied as a storage system that includes imbalancedactive/active controllers, as a storage system that includes balancedactive/active controllers, as a storage system that includesactive/active controllers where less than all of each controller'sresources are utilized such that each controller has reserve resourcesthat may be used to support failover, as a storage system that includesfully active/active controllers, as a storage system that includesdataset-segregated controllers, as a storage system that includesdual-layer architectures with front-end controllers and back-endintegrated storage controllers, as a storage system that includesscale-out clusters of dual-controller arrays, as well as combinations ofsuch embodiments.

In the example depicted in FIG. 3A, the storage system 306 is coupled tothe cloud services provider 302 via a data communications link 304. Thedata communications link 304 may be embodied as a dedicated datacommunications link, as a data communications pathway that is providedthrough the use of one or data communications networks such as a widearea network (‘WAN’) or local area network (‘LAM’), or as some othermechanism capable of transporting digital information between thestorage system 306 and the cloud services provider 302. Such a datacommunications link 304 may be fully wired, fully wireless, or someaggregation of wired and wireless data communications pathways. In suchan example, digital information may be exchanged between the storagesystem 306 and the cloud services provider 302 via the datacommunications link 304 using one or more data communications protocols.For example, digital information may be exchanged between the storagesystem 306 and the cloud services provider 302 via the datacommunications link 304 using the handheld device transfer protocol(‘HDTP’), hypertext transfer protocol (‘HTTP’), internet protocol(‘IP’), real-time transfer protocol (‘RTP’), transmission controlprotocol (‘TCP’), user datagram protocol (‘UDP’), wireless applicationprotocol (‘WAP’), or other protocol.

The cloud services provider 302 depicted in FIG. 3A may be embodied, forexample, as a system and computing environment that provides services tousers of the cloud services provider 302 through the sharing ofcomputing resources via the data communications link 304. The cloudservices provider 302 may provide on-demand access to a shared pool ofconfigurable computing resources such as computer networks, servers,storage, applications and services, and so on. The shared pool ofconfigurable resources may be rapidly provisioned and released to a userof the cloud services provider 302 with minimal management effort.Generally, the user of the cloud services provider 302 is unaware of theexact computing resources utilized by the cloud services provider 302 toprovide the services. Although in many cases such a cloud servicesprovider 302 may be accessible via the Internet, readers of skill in theart will recognize that any system that abstracts the use of sharedresources to provide services to a user through any data communicationslink may be considered a cloud services provider 302.

In the example depicted in FIG. 3A, the cloud services provider 302 maybe configured to provide a variety of services to the storage system 306and users of the storage system 306 through the implementation ofvarious service models. For example, the cloud services provider 302 maybe configured to provide services to the storage system 306 and users ofthe storage system 306 through the implementation of an infrastructureas a service (‘IaaS’) service model where the cloud services provider302 offers computing infrastructure such as virtual machines and otherresources as a service to subscribers. In addition, the cloud servicesprovider 302 may be configured to provide services to the storage system306 and users of the storage system 306 through the implementation of aplatform as a service (‘PaaS’) service model where the cloud servicesprovider 302 offers a development environment to application developers.Such a development environment may include, for example, an operatingsystem, programming-language execution environment, database, webserver, or other components that may be utilized by applicationdevelopers to develop and run software solutions on a cloud platform.Furthermore, the cloud services provider 302 may be configured toprovide services to the storage system 306 and users of the storagesystem 306 through the implementation of a software as a service(‘SaaS’) service model where the cloud services provider 302 offersapplication software, databases, as well as the platforms that are usedto run the applications to the storage system 306 and users of thestorage system 306, providing the storage system 306 and users of thestorage system 306 with on-demand software and eliminating the need toinstall and run the application on local computers, which may simplifymaintenance and support of the application. The cloud services provider302 may be further configured to provide services to the storage system306 and users of the storage system 306 through the implementation of anauthentication as a service (‘AaaS’) service model where the cloudservices provider 302 offers authentication services that can be used tosecure access to applications, data sources, or other resources. Thecloud services provider 302 may also be configured to provide servicesto the storage system 306 and users of the storage system 306 throughthe implementation of a storage as a service model where the cloudservices provider 302 offers access to its storage infrastructure foruse by the storage system 306 and users of the storage system 306.Readers will appreciate that the cloud services provider 302 may beconfigured to provide additional services to the storage system 306 andusers of the storage system 306 through the implementation of additionalservice models, as the service models described above are included onlyfor explanatory purposes and in no way represent a limitation of theservices that may be offered by the cloud services provider 302 or alimitation as to the service models that may be implemented by the cloudservices provider 302.

In the example depicted in FIG. 3A, the cloud services provider 302 maybe embodied, for example, as a private cloud, as a public cloud, or as acombination of a private cloud and public cloud. In an embodiment inwhich the cloud services provider 302 is embodied as a private cloud,the cloud services provider 302 may be dedicated to providing servicesto a single organization rather than providing services to multipleorganizations. In an embodiment where the cloud services provider 302 isembodied as a public cloud, the cloud services provider 302 may provideservices to multiple organizations. Public cloud and private clouddeployment models may differ and may come with various advantages anddisadvantages. For example, because a public cloud deployment involvesthe sharing of a computing infrastructure across different organization,such a deployment may not be ideal for organizations with securityconcerns, mission-critical workloads, uptime requirements demands, andso on. While a private cloud deployment can address some of theseissues, a private cloud deployment may require on-premises staff tomanage the private cloud. In still alternative embodiments, the cloudservices provider 302 may be embodied as a mix of a private and publiccloud services with a hybrid cloud deployment.

Although not explicitly depicted in FIG. 3A, readers will appreciatethat additional hardware components and additional software componentsmay be necessary to facilitate the delivery of cloud services to thestorage system 306 and users of the storage system 306. For example, thestorage system 306 may be coupled to (or even include) a cloud storagegateway. Such a cloud storage gateway may be embodied, for example, ashardware-based or software-based appliance that is located on premisewith the storage system 306. Such a cloud storage gateway may operate asa bridge between local applications that are executing on the storagearray 306 and remote, cloud-based storage that is utilized by thestorage array 306. Through the use of a cloud storage gateway,organizations may move primary iSCSI or NAS to the cloud servicesprovider 302, thereby enabling the organization to save space on theiron-premises storage systems. Such a cloud storage gateway may beconfigured to emulate a disk array, a block-based device, a file server,or other storage system that can translate the SCSI commands, fileserver commands, or other appropriate command into REST-space protocolsthat facilitate communications with the cloud services provider 302.

In order to enable the storage system 306 and users of the storagesystem 306 to make use of the services provided by the cloud servicesprovider 302, a cloud migration process may take place during whichdata, applications, or other elements from an organization's localsystems (or even from another cloud environment) are moved to the cloudservices provider 302. In order to successfully migrate data,applications, or other elements to the cloud services provider's 302environment, middleware such as a cloud migration tool may be utilizedto bridge gaps between the cloud services provider's 302 environment andan organization's environment. Such cloud migration tools may also beconfigured to address potentially high network costs and long transfertimes associated with migrating large volumes of data to the cloudservices provider 302, as well as addressing security concernsassociated with sensitive data to the cloud services provider 302 overdata communications networks. In order to further enable the storagesystem 306 and users of the storage system 306 to make use of theservices provided by the cloud services provider 302, a cloudorchestrator may also be used to arrange and coordinate automated tasksin pursuit of creating a consolidated process or workflow. Such a cloudorchestrator may perform tasks such as configuring various components,whether those components are cloud components or on-premises components,as well as managing the interconnections between such components. Thecloud orchestrator can simplify the inter-component communication andconnections to ensure that links are correctly configured andmaintained.

In the example depicted in FIG. 3A, and as described briefly above, thecloud services provider 302 may be configured to provide services to thestorage system 306 and users of the storage system 306 through the usageof a SaaS service model where the cloud services provider 302 offersapplication software, databases, as well as the platforms that are usedto run the applications to the storage system 306 and users of thestorage system 306, providing the storage system 306 and users of thestorage system 306 with on-demand software and eliminating the need toinstall and run the application on local computers, which may simplifymaintenance and support of the application. Such applications may takemany forms in accordance with various embodiments of the presentdisclosure. For example, the cloud services provider 302 may beconfigured to provide access to data analytics applications to thestorage system 306 and users of the storage system 306. Such dataanalytics applications may be configured, for example, to receivetelemetry data phoned home by the storage system 306. Such telemetrydata may describe various operating characteristics of the storagesystem 306 and may be analyzed, for example, to determine the health ofthe storage system 306, to identify workloads that are executing on thestorage system 306, to predict when the storage system 306 will run outof various resources, to recommend configuration changes, hardware orsoftware upgrades, workflow migrations, or other actions that mayimprove the operation of the storage system 306.

The cloud services provider 302 may also be configured to provide accessto virtualized computing environments to the storage system 306 andusers of the storage system 306. Such virtualized computing environmentsmay be embodied, for example, as a virtual machine or other virtualizedcomputer hardware platforms, virtual storage devices, virtualizedcomputer network resources, and so on. Examples of such virtualizedenvironments can include virtual machines that are created to emulate anactual computer, virtualized desktop environments that separate alogical desktop from a physical machine, virtualized file systems thatallow uniform access to different types of concrete file systems, andmany others.

For further explanation, FIG. 3B sets forth a diagram of a storagesystem 306 in accordance with some embodiments of the presentdisclosure. Although depicted in less detail, the storage system 306depicted in FIG. 3B may be similar to the storage systems describedabove with reference to FIGS. 1A-1D and FIGS. 2A-2G as the storagesystem may include many of the components described above.

The storage system 306 depicted in FIG. 3B may include storage resources308, which may be embodied in many forms. For example, in someembodiments the storage resources 308 can include nano-RAM or anotherform of nonvolatile random access memory that utilizes carbon nanotubesdeposited on a substrate. In some embodiments, the storage resources 308may include 3D crosspoint non-volatile memory in which bit storage isbased on a change of bulk resistance, in conjunction with a stackablecross-gridded data access array. In some embodiments, the storageresources 308 may include flash memory, including single-level cell(‘SLC’) NAND flash, multi-level cell (‘MLC’) NAND flash, triple-levelcell (‘TLC’) NAND flash, quad-level cell (‘QLC’) NAND flash, and others.In some embodiments, the storage resources 308 may include non-volatilemagnetoresistive random-access memory (‘MRAM’), including spin transfertorque (‘STT’) MRAM, in which data is stored through the use of magneticstorage elements. In some embodiments, the example storage resources 308may include non-volatile phase-change memory (‘PCM’) that may have theability to hold multiple bits in a single cell as cells can achieve anumber of distinct intermediary states. In some embodiments, the storageresources 308 may include quantum memory that allows for the storage andretrieval of photonic quantum information. In some embodiments, theexample storage resources 308 may include resistive random-access memory(‘ReRAM’) in which data is stored by changing the resistance across adielectric solid-state material. In some embodiments, the storageresources 308 may include storage class memory (‘SCM’) in whichsolid-state nonvolatile memory may be manufactured at a high densityusing some combination of sub-lithographic patterning techniques,multiple bits per cell, multiple layers of devices, and so on. Readerswill appreciate that other forms of computer memories and storagedevices may be utilized by the storage systems described above,including DRAM, SRAM, EEPROM, universal memory, and many others. Thestorage resources 308 depicted in FIG. 3A may be embodied in a varietyof form factors, including but not limited to, dual in-line memorymodules (‘DIMMs’), non-volatile dual in-line memory modules (‘NVDIMMs’),M.2, U.2, and others.

The example storage system 306 depicted in FIG. 3B may implement avariety of storage architectures. For example, storage systems inaccordance with some embodiments of the present disclosure may utilizeblock storage where data is stored in blocks, and each block essentiallyacts as an individual hard drive. Storage systems in accordance withsome embodiments of the present disclosure may utilize object storage,where data is managed as objects. Each object may include the dataitself, a variable amount of metadata, and a globally unique identifier,where object storage can be implemented at multiple levels (e.g., devicelevel, system level, interface level). Storage systems in accordancewith some embodiments of the present disclosure utilize file storage inwhich data is stored in a hierarchical structure. Such data may be savedin files and folders, and presented to both the system storing it andthe system retrieving it in the same format.

The example storage system 306 depicted in FIG. 3B may be embodied as astorage system in which additional storage resources can be addedthrough the use of a scale-up model, additional storage resources can beadded through the use of a scale-out model, or through some combinationthereof. In a scale-up model, additional storage may be added by addingadditional storage devices. In a scale-out model, however, additionalstorage nodes may be added to a cluster of storage nodes, where suchstorage nodes can include additional processing resources, additionalnetworking resources, and so on.

The storage system 306 depicted in FIG. 3B also includes communicationsresources 310 that may be useful in facilitating data communicationsbetween components within the storage system 306, as well as datacommunications between the storage system 306 and computing devices thatare outside of the storage system 306. The communications resources 310may be configured to utilize a variety of different protocols and datacommunication fabrics to facilitate data communications betweencomponents within the storage systems as well as computing devices thatare outside of the storage system. For example, the communicationsresources 310 can include fibre channel (‘FC’) technologies such as FCfabrics and FC protocols that can transport SCSI commands over FCnetworks. The communications resources 310 can also include FC overethernet (‘FCoE’) technologies through which FC frames are encapsulatedand transmitted over Ethernet networks. The communications resources 310can also include InfiniBand (‘IB’) technologies in which a switchedfabric topology is utilized to facilitate transmissions between channeladapters. The communications resources 310 can also include NVM Express(‘NVMe’) technologies and NVMe over fabrics (‘NVMeoF’) technologiesthrough which non-volatile storage media attached via a PCI express(‘PCIe’) bus may be accessed. The communications resources 310 can alsoinclude mechanisms for accessing storage resources 308 within thestorage system 306 utilizing serial attached SCSI (‘SAS’), serial ATA(‘SATA’) bus interfaces for connecting storage resources 308 within thestorage system 306 to host bus adapters within the storage system 306,internet small computer systems interface (‘iSCSI’) technologies toprovide block-level access to storage resources 308 within the storagesystem 306, and other communications resources that that may be usefulin facilitating data communications between components within thestorage system 306, as well as data communications between the storagesystem 306 and computing devices that are outside of the storage system306.

The storage system 306 depicted in FIG. 3B also includes processingresources 312 that may be useful in useful in executing computer programinstructions and performing other computational tasks within the storagesystem 306. The processing resources 312 may include one or moreapplication-specific integrated circuits (‘ASICs’) that are customizedfor some particular purpose as well as one or more central processingunits (‘CPUs’). The processing resources 312 may also include one ormore digital signal processors (‘DSPs’), one or more field-programmablegate arrays (‘FPGAs’), one or more systems on a chip (‘SoCs’), or otherform of processing resources 312. The storage system 306 may utilize thestorage resources 312 to perform a variety of tasks including, but notlimited to, supporting the execution of software resources 314 that willbe described in greater detail below.

The storage system 306 depicted in FIG. 3B also includes softwareresources 314 that, when executed by processing resources 312 within thestorage system 306, may perform various tasks. The software resources314 may include, for example, one or more modules of computer programinstructions that when executed by processing resources 312 within thestorage system 306 are useful in carrying out various data protectiontechniques to preserve the integrity of data that is stored within thestorage systems. Readers will appreciate that such data protectiontechniques may be carried out, for example, by system software executingon computer hardware within the storage system, by a cloud servicesprovider, or in other ways. Such data protection techniques can include,for example, data archiving techniques that cause data that is no longeractively used to be moved to a separate storage device or separatestorage system for long-term retention, data backup techniques throughwhich data stored in the storage system may be copied and stored in adistinct location to avoid data loss in the event of equipment failureor some other form of catastrophe with the storage system, datareplication techniques through which data stored in the storage systemis replicated to another storage system such that the data may beaccessible via multiple storage systems, data snapshotting techniquesthrough which the state of data within the storage system is captured atvarious points in time, data and database cloning techniques throughwhich duplicate copies of data and databases may be created, and otherdata protection techniques. Through the use of such data protectiontechniques, business continuity and disaster recovery objectives may bemet as a failure of the storage system may not result in the loss ofdata stored in the storage system.

The software resources 314 may also include software that is useful inimplementing software-defined storage (‘SDS’). In such an example, thesoftware resources 314 may include one or more modules of computerprogram instructions that, when executed, are useful in policy-basedprovisioning and management of data storage that is independent of theunderlying hardware. Such software resources 314 may be useful inimplementing storage virtualization to separate the storage hardwarefrom the software that manages the storage hardware.

The software resources 314 may also include software that is useful infacilitating and optimizing I/O operations that are directed to thestorage resources 308 in the storage system 306. For example, thesoftware resources 314 may include software modules that perform carryout various data reduction techniques such as, for example, datacompression, data deduplication, and others. The software resources 314may include software modules that intelligently group together I/Ooperations to facilitate better usage of the underlying storage resource308, software modules that perform data migration operations to migratefrom within a storage system, as well as software modules that performother functions. Such software resources 314 may be embodied as one ormore software containers or in many other ways.

Readers will appreciate that the presence of such software resources 314may provide for an improved user experience of the storage system 306,an expansion of functionality supported by the storage system 306, andmany other benefits. Consider the specific example of the softwareresources 314 carrying out data backup techniques through which datastored in the storage system may be copied and stored in a distinctlocation to avoid data loss in the event of equipment failure or someother form of catastrophe. In such an example, the systems describedherein may more reliably (and with less burden placed on the user)perform backup operations relative to interactive backup managementsystems that require high degrees of user interactivity, offer lessrobust automation and feature sets, and so on.

The storage systems described above may carry out intelligent databackup techniques through which data stored in the storage system may becopied and stored in a distinct location to avoid data loss in the eventof equipment failure or some other form of catastrophe. For example, thestorage systems described above may be configured to examine each backupto avoid restoring the storage system to an undesirable state. Consideran example in which malware infects the storage system. In such anexample, the storage system may include software resources 314 that canscan each backup to identify backups that were captured before themalware infected the storage system and those backups that were capturedafter the malware infected the storage system. In such an example, thestorage system may restore itself from a backup that does not includethe malware—or at least not restore the portions of a backup thatcontained the malware. In such an example, the storage system mayinclude software resources 314 that can scan each backup to identify thepresences of malware (or a virus, or some other undesirable), forexample, by identifying write operations that were serviced by thestorage system and originated from a network subnet that is suspected tohave delivered the malware, by identifying write operations that wereserviced by the storage system and originated from a user that issuspected to have delivered the malware, by identifying write operationsthat were serviced by the storage system and examining the content ofthe write operation against fingerprints of the malware, and in manyother ways.

Readers will further appreciate that the backups (often in the form ofone or more snapshots) may also be utilized to perform rapid recovery ofthe storage system. Consider an example in which the storage system isinfected with ransomware that locks users out of the storage system. Insuch an example, software resources 314 within the storage system may beconfigured to detect the presence of ransomware and may be furtherconfigured to restore the storage system to a point-in-time, using theretained backups, prior to the point-in-time at which the ransomwareinfected the storage system. In such an example, the presence ofransomware may be explicitly detected through the use of software toolsutilized by the system, through the use of a key (e.g., a USB drive)that is inserted into the storage system, or in a similar way. Likewise,the presence of ransomware may be inferred in response to systemactivity meeting a predetermined fingerprint such as, for example, noreads or writes coming into the system for a predetermined period oftime.

Readers will appreciate that the various components depicted in FIG. 3Bmay be grouped into one or more optimized computing packages asconverged infrastructures. Such converged infrastructures may includepools of computers, storage and networking resources that can be sharedby multiple applications and managed in a collective manner usingpolicy-driven processes. Such converged infrastructures may minimizecompatibility issues between various components within the storagesystem 306 while also reducing various costs associated with theestablishment and operation of the storage system 306. Such convergedinfrastructures may be implemented with a converged infrastructurereference architecture, with standalone appliances, with a softwaredriven hyper-converged approach (e.g., hyper-converged infrastructures),or in other ways.

Readers will appreciate that the storage system 306 depicted in FIG. 3Bmay be useful for supporting various types of software applications. Forexample, the storage system 306 may be useful in supporting artificialintelligence (‘AI’) applications, database applications, DevOpsprojects, electronic design automation tools, event-driven softwareapplications, high performance computing applications, simulationapplications, high-speed data capture and analysis applications, machinelearning applications, media production applications, media servingapplications, picture archiving and communication systems (‘PACS’)applications, software development applications, virtual realityapplications, augmented reality applications, and many other types ofapplications by providing storage resources to such applications.

The storage systems described above may operate to support a widevariety of applications. In view of the fact that the storage systemsinclude compute resources, storage resources, and a wide variety ofother resources, the storage systems may be well suited to supportapplications that are resource intensive such as, for example, AIapplications. Such AI applications may enable devices to perceive theirenvironment and take actions that maximize their chance of success atsome goal. Examples of such AI applications can include IBM Watson,Microsoft Oxford, Google DeepMind, Baidu Minwa, and others. The storagesystems described above may also be well suited to support other typesof applications that are resource intensive such as, for example,machine learning applications. Machine learning applications may performvarious types of data analysis to automate analytical model building.Using algorithms that iteratively learn from data, machine learningapplications can enable computers to learn without being explicitlyprogrammed.

In addition to the resources already described, the storage systemsdescribed above may also include graphics processing units (‘GPUs’),occasionally referred to as visual processing unit (‘VPUs’). Such GPUsmay be embodied as specialized electronic circuits that rapidlymanipulate and alter memory to accelerate the creation of images in aframe buffer intended for output to a display device. Such GPUs may beincluded within any of the computing devices that are part of thestorage systems described above, including as one of many individuallyscalable components of a storage system, where other examples ofindividually scalable components of such storage system can includestorage components, memory components, compute components (e.g., CPUs,FPGAs, ASICs), networking components, software components, and others.In addition to GPUs, the storage systems described above may alsoinclude neural network processors (‘NNPs’) for use in various aspects ofneural network processing. Such NNPs may be used in place of (or inaddition to) GPUs and may be also be independently scalable.

As described above, the storage systems described herein may beconfigured to support artificial intelligence applications, machinelearning applications, big data analytics applications, and many othertypes of applications. The rapid growth in these sort of applications isbeing driven by three technologies: deep learning (DL), GPU processors,and Big Data. Deep learning is a computing model that makes use ofmassively parallel neural networks inspired by the human brain. Insteadof experts handcrafting software, a deep learning model writes its ownsoftware by learning from lots of examples. A GPU is a modern processorwith thousands of cores, well-suited to run algorithms that looselyrepresent the parallel nature of the human brain.

Advances in deep neural networks have ignited a new wave of algorithmsand tools for data scientists to tap into their data with artificialintelligence (AI). With improved algorithms, larger data sets, andvarious frameworks (including open-source software libraries for machinelearning across a range of tasks), data scientists are tackling new usecases like autonomous driving vehicles, natural language processing andunderstanding, computer vision, machine reasoning, strong AI, and manyothers. Applications of such techniques may include: machine andvehicular object detection, identification and avoidance; visualrecognition, classification and tagging; algorithmic financial tradingstrategy performance management; simultaneous localization and mapping;predictive maintenance of high-value machinery; prevention against cybersecurity threats, expertise automation; image recognition andclassification; question answering; robotics; text analytics(extraction, classification) and text generation and translation; andmany others. Applications of AI techniques has materialized in a widearray of products include, for example, Amazon Echo's speech recognitiontechnology that allows users to talk to their machines, GoogleTranslate™ which allows for machine-based language translation,Spotify's Discover Weekly that provides recommendations on new songs andartists that a user may like based on the user's usage and trafficanalysis, Quill's text generation offering that takes structured dataand turns it into narrative stories, Chatbots that provide real-time,contextually specific answers to questions in a dialog format, and manyothers. Furthermore, AI may impact a wide variety of industries andsectors. For example, AI solutions may be used in healthcare to takeclinical notes, patient files, research data, and other inputs togenerate potential treatment options for doctors to explore. Likewise,AI solutions may be used by retailers to personalize consumerrecommendations based on a person's digital footprint of behaviors,profile data, or other data.

Training deep neural networks, however, requires both high quality inputdata and large amounts of computation. GPUs are massively parallelprocessors capable of operating on large amounts of data simultaneously.When combined into a multi-GPU cluster, a high throughput pipeline maybe required to feed input data from storage to the compute engines. Deeplearning is more than just constructing and training models. There alsoexists an entire data pipeline that must be designed for the scale,iteration, and experimentation necessary for a data science team tosucceed.

Data is the heart of modern AI and deep learning algorithms. Beforetraining can begin, one problem that must be addressed revolves aroundcollecting the labeled data that is crucial for training an accurate AImodel. A full scale AI deployment may be required to continuouslycollect, clean, transform, label, and store large amounts of data.Adding additional high quality data points directly translates to moreaccurate models and better insights. Data samples may undergo a seriesof processing steps including, but not limited to: 1) ingesting the datafrom an external source into the training system and storing the data inraw form, 2) cleaning and transforming the data in a format convenientfor training, including linking data samples to the appropriate label,3) exploring parameters and models, quickly testing with a smallerdataset, and iterating to converge on the most promising models to pushinto the production cluster, 4) executing training phases to selectrandom batches of input data, including both new and older samples, andfeeding those into production GPU servers for computation to updatemodel parameters, and 5) evaluating including using a holdback portionof the data not used in training in order to evaluate model accuracy onthe holdout data. This lifecycle may apply for any type of parallelizedmachine learning, not just neural networks or deep learning. Forexample, standard machine learning frameworks may rely on CPUs insteadof GPUs but the data ingest and training workflows may be the same.Readers will appreciate that a single shared storage data hub creates acoordination point throughout the lifecycle without the need for extradata copies among the ingest, preprocessing, and training stages. Rarelyis the ingested data used for only one purpose, and shared storage givesthe flexibility to train multiple different models or apply traditionalanalytics to the data.

Readers will appreciate that each stage in the AI data pipeline may havevarying requirements from the data hub (e.g., the storage system orcollection of storage systems). Scale-out storage systems must deliveruncompromising performance for all manner of access types andpatterns—from small, metadata-heavy to large files, from random tosequential access patterns, and from low to high concurrency. Thestorage systems described above may serve as an ideal AI data hub as thesystems may service unstructured workloads. In the first stage, data isideally ingested and stored on to the same data hub that followingstages will use, in order to avoid excess data copying. The next twosteps can be done on a standard compute server that optionally includesa GPU, and then in the fourth and last stage, full training productionjobs are run on powerful GPU-accelerated servers. Often, there is aproduction pipeline alongside an experimental pipeline operating on thesame dataset. Further, the GPU-accelerated servers can be usedindependently for different models or joined together to train on onelarger model, even spanning multiple systems for distributed training.If the shared storage tier is slow, then data must be copied to localstorage for each phase, resulting in wasted time staging data ontodifferent servers. The ideal data hub for the AI training pipelinedelivers performance similar to data stored locally on the server nodewhile also having the simplicity and performance to enable all pipelinestages to operate concurrently.

A data scientist works to improve the usefulness of the trained modelthrough a wide variety of approaches: more data, better data, smartertraining, and deeper models. In many cases, there will be teams of datascientists sharing the same datasets and working in parallel to producenew and improved training models. Often, there is a team of datascientists working within these phases concurrently on the same shareddatasets. Multiple, concurrent workloads of data processing,experimentation, and full-scale training layer the demands of multipleaccess patterns on the storage tier. In other words, storage cannot justsatisfy large file reads, but must contend with a mix of large and smallfile reads and writes. Finally, with multiple data scientists exploringdatasets and models, it may be critical to store data in its nativeformat to provide flexibility for each user to transform, clean, and usethe data in a unique way. The storage systems described above mayprovide a natural shared storage home for the dataset, with dataprotection redundancy (e.g., by using RAID6) and the performancenecessary to be a common access point for multiple developers andmultiple experiments. Using the storage systems described above mayavoid the need to carefully copy subsets of the data for local work,saving both engineering and GPU-accelerated servers use time. Thesecopies become a constant and growing tax as the raw data set and desiredtransformations constantly update and change.

Readers will appreciate that a fundamental reason why deep learning hasseen a surge in success is the continued improvement of models withlarger data set sizes. In contrast, classical machine learningalgorithms, like logistic regression, stop improving in accuracy atsmaller data set sizes. As such, the separation of compute resources andstorage resources may also allow independent scaling of each tier,avoiding many of the complexities inherent in managing both together. Asthe data set size grows or new data sets are considered, a scale outstorage system must be able to expand easily. Similarly, if moreconcurrent training is required, additional GPUs or other computeresources can be added without concern for their internal storage.Furthermore, the storage systems described above may make building,operating, and growing an AI system easier due to the random readbandwidth provided by the storage systems, the ability to of the storagesystems to randomly read small files (50 KB) high rates (meaning that noextra effort is required to aggregate individual data points to makelarger, storage-friendly files), the ability of the storage systems toscale capacity and performance as either the dataset grows or thethroughput requirements grow, the ability of the storage systems tosupport files or objects, the ability of the storage systems to tuneperformance for large or small files (i.e., no need for the user toprovision filesystems), the ability of the storage systems to supportnon-disruptive upgrades of hardware and software even during productionmodel training, and for many other reasons.

Small file performance of the storage tier may be critical as many typesof inputs, including text, audio, or images will be natively stored assmall files. If the storage tier does not handle small files well, anextra step will be required to pre-process and group samples into largerfiles. Storage, built on top of spinning disks, that relies on SSD as acaching tier, may fall short of the performance needed. Because trainingwith random input batches results in more accurate models, the entiredata set must be accessible with full performance. SSD caches onlyprovide high performance for a small subset of the data and will beineffective at hiding the latency of spinning drives.

Although the preceding paragraphs discuss deep learning applications,readers will appreciate that the storage systems described herein mayalso be part of a distributed deep learning (‘DDL’) platform to supportthe execution of DDL algorithms. Distributed deep learning may can beused to significantly accelerate deep learning with distributedcomputing on GPUs (or other form of accelerator or computer programinstruction executor), such that parallelism can be achieved. Inaddition, the output of training machine learning and deep learningmodels, such as a fully trained machine learning model, may be used fora variety of purposes and in conjunction with other tools. For example,trained machine learning models may be used in conjunction with toolslike Core ML to integrate a broad variety of machine learning modeltypes into an application. In fact, trained models may be run throughCore ML converter tools and inserted into a custom application that canbe deployed on compatible devices. The storage systems described abovemay also be paired with other technologies such as TensorFlow, anopen-source software library for dataflow programming across a range oftasks that may be used for machine learning applications such as neuralnetworks, to facilitate the development of such machine learning models,applications, and so on.

Readers will further appreciate that the systems described above may bedeployed in a variety of ways to support the democratization of AI, asAI becomes more available for mass consumption. The democratization ofAI may include, for example, the ability to offer AI as aPlatform-as-a-Service, the growth of Artificial general intelligenceofferings, the proliferation of Autonomous level 4 and Autonomous level5 vehicles, the availability of autonomous mobile robots, thedevelopment of conversational AI platforms, and many others. Forexample, the systems described above may be deployed in cloudenvironments, edge environments, or other environments that are usefulin supporting the democratization of AI. As part of the democratizationof AI, a movement may occur from narrow AI that consists of highlyscoped machine learning solutions that target a particular task toartificial general intelligence where the use of machine learning isexpanded to handle a broad range of use cases that could essentiallyperform any intelligent task that a human could perform and could learndynamically, much like a human.

The storage systems described above may also be used in a neuromorphiccomputing environment. Neuromorphic computing is a form of computingthat mimics brain cells. To support neuromorphic computing, anarchitecture of interconnected “neurons” replace traditional computingmodels with low-powered signals that go directly between neurons formore efficient computation. Neuromorphic computing may make use ofvery-large-scale integration (VLSI) systems containing electronic analogcircuits to mimic neuro-biological architectures present in the nervoussystem, as well as analog, digital, mixed-mode analog/digital VLSI, andsoftware systems that implement models of neural systems for perception,motor control, or multisensory integration.

Readers will appreciate that the storage systems described above may beconfigured to support the storage or use of (among other types of data)blockchains. Such blockchains may be embodied as a continuously growinglist of records, called blocks, which are linked and secured usingcryptography. Each block in a blockchain may contain a hash pointer as alink to a previous block, a timestamp, transaction data, and so on.Blockchains may be designed to be resistant to modification of the dataand can serve as an open, distributed ledger that can recordtransactions between two parties efficiently and in a verifiable andpermanent way. This makes blockchains potentially suitable for therecording of events, medical records, and other records managementactivities, such as identity management, transaction processing, andothers. In addition to supporting the storage and use of blockchaintechnologies, the storage systems described above may also support thestorage and use of derivative items such as, for example, open sourceblockchains and related tools that are part of the IBM™ Hyperledgerproject, permissioned blockchains in which a certain number of trustedparties are allowed to access the block chain, blockchain products thatenable developers to build their own distributed ledger projects, andothers. Readers will appreciate that blockchain technologies may impacta wide variety of industries and sectors. For example, blockchaintechnologies may be used in real estate transactions as blockchain basedcontracts whose use can eliminate the need for 3^(rd) parties and enableself-executing actions when conditions are met. Likewise, universalhealth records can be created by aggregating and placing a person'shealth history onto a blockchain ledger for any healthcare provider, orpermissioned health care providers, to access and update.

Readers will appreciate that the usage of blockchains is not limited tofinancial transactions, contracts, and the like. In fact, blockchainsmay be leveraged to enable the decentralized aggregation, ordering,timestamping and archiving of any type of information, includingstructured data, correspondence, documentation, or other data. Throughthe usage of blockchains, participants can provably and permanentlyagree on exactly what data was entered, when and by whom, withoutrelying on a trusted intermediary. For example, SAP's recently launchedblockchain platform, which supports MultiChain and Hyperledger Fabric,targets a broad range of supply chain and other non-financialapplications.

One way to use a blockchain for recording data is to embed each piece ofdata directly inside a transaction. Every blockchain transaction may bedigitally signed by one or more parties, replicated to a plurality ofnodes, ordered and timestamped by the chain's consensus algorithm, andstored permanently in a tamper-proof way. Any data within thetransaction will therefore be stored identically but independently byevery node, along with a proof of who wrote it and when. The chain'susers are able to retrieve this information at any future time. Thistype of storage may be referred to as on-chain storage. On-chain storagemay not be particularly practical, however, when attempting to store avery large dataset. As such, in accordance with embodiments of thepresent disclosure, blockchains and the storage systems described hereinmay be leveraged to support on-chain storage of data as well asoff-chain storage of data.

Off-chain storage of data can be implemented in a variety of ways andcan occur when the data itself is not stored within the blockchain. Forexample, in one embodiment, a hash function may be utilized and the dataitself may be fed into the hash function to generate a hash value. Insuch an example, the hashes of large pieces of data may be embeddedwithin transactions, instead of the data itself. Each hash may serve asa commitment to its input data, with the data itself being storedoutside of the blockchain. Readers will appreciate that any blockchainparticipant that needs an off-chain piece of data cannot reproduce thedata from its hash, but if the data can be retrieved in some other way,then the on-chain hash serves to confirm who created it and when. Justlike regular on-chain data, the hash may be embedded inside a digitallysigned transaction, which was included in the chain by consensus.

Readers will appreciate that, in other embodiments, alternatives toblockchains may be used to facilitate the decentralized storage ofinformation. For example, one alternative to a blockchain that may beused is a blockweave. While conventional blockchains store everytransaction to achieve validation, a blockweave permits securedecentralization without the usage of the entire chain, thereby enablinglow cost on-chain storage of data. Such blockweaves may utilize aconsensus mechanism that is based on proof of access (PoA) and proof ofwork (PoW). While typical PoW systems only depend on the previous blockin order to generate each successive block, the PoA algorithm mayincorporate data from a randomly chosen previous block. Combined withthe blockweave data structure, miners do not need to store all blocks(forming a blockchain), but rather can store any previous blocks forminga weave of blocks (a blockweave). This enables increased levels ofscalability, speed and low-cost and reduces the cost of data storage inpart because miners need not store all blocks, thereby resulting in asubstantial reduction in the amount of electricity that is consumedduring the mining process because, as the network expands, electricityconsumption decreases because a blockweave demands less and less hashingpower for consensus as data is added to the system. Furthermore,blockweaves may be deployed on a decentralized storage network in whichincentives are created to encourage rapid data sharing. Suchdecentralized storage networks may also make use of blockshadowingtechniques, where nodes only send a minimal block “shadow” to othernodes that allows peers to reconstruct a full block, instead oftransmitting the full block itself.

The storage systems described above may, either alone or in combinationwith other computing devices, be used to support in-memory computingapplications. In memory computing involves the storage of information inRAM that is distributed across a cluster of computers. In-memorycomputing helps business customers, including retailers, banks andutilities, to quickly detect patterns, analyze massive data volumes onthe fly, and perform their operations quickly. Readers will appreciatethat the storage systems described above, especially those that areconfigurable with customizable amounts of processing resources, storageresources, and memory resources (e.g., those systems in which bladesthat contain configurable amounts of each type of resource), may beconfigured in a way so as to provide an infrastructure that can supportin-memory computing. Likewise, the storage systems described above mayinclude component parts (e.g., NVDIMMs, 3D crosspoint storage thatprovide fast random access memory that is persistent) that can actuallyprovide for an improved in-memory computing environment as compared toin-memory computing environments that rely on RAM distributed acrossdedicated servers.

In some embodiments, the storage systems described above may beconfigured to operate as a hybrid in-memory computing environment thatincludes a universal interface to all storage media (e.g., RAM, flashstorage, 3D crosspoint storage). In such embodiments, users may have noknowledge regarding the details of where their data is stored but theycan still use the same full, unified API to address data. In suchembodiments, the storage system may (in the background) move data to thefastest layer available—including intelligently placing the data independence upon various characteristics of the data or in dependenceupon some other heuristic. In such an example, the storage systems mayeven make use of existing products such as Apache Ignite and GridGain tomove data between the various storage layers, or the storage systems maymake use of custom software to move data between the various storagelayers. The storage systems described herein may implement variousoptimizations to improve the performance of in-memory computing such as,for example, having computations occur as close to the data as possible.

Readers will further appreciate that in some embodiments, the storagesystems described above may be paired with other resources to supportthe applications described above. For example, one infrastructure couldinclude primary compute in the form of servers and workstations whichspecialize in using General-purpose computing on graphics processingunits (‘GPGPU’) to accelerate deep learning applications that areinterconnected into a computation engine to train parameters for deepneural networks. Each system may have Ethernet external connectivity,InfiniBand external connectivity, some other form of externalconnectivity, or some combination thereof. In such an example, the GPUscan be grouped for a single large training or used independently totrain multiple models. The infrastructure could also include a storagesystem such as those described above to provide, for example, ascale-out all-flash file or object store through which data can beaccessed via high-performance protocols such as NFS, S3, and so on. Theinfrastructure can also include, for example, redundant top-of-rackEthernet switches connected to storage and compute via ports in MLAGport channels for redundancy. The infrastructure could also includeadditional compute in the form of whitebox servers, optionally withGPUs, for data ingestion, pre-processing, and model debugging. Readerswill appreciate that additional infrastructures are also be possible.

Readers will appreciate that the systems described above may be bettersuited for the applications described above relative to other systemsthat may include, for example, a distributed direct-attached storage(DDAS) solution deployed in server nodes. Such DDAS solutions may bebuilt for handling large, less sequential accesses but may be less ableto handle small, random accesses. Readers will further appreciate thatthe storage systems described above may be utilized to provide aplatform for the applications described above that is preferable to theutilization of cloud-based resources as the storage systems may beincluded in an on-site or in-house infrastructure that is more secure,more locally and internally managed, more robust in feature sets andperformance, or otherwise preferable to the utilization of cloud-basedresources as part of a platform to support the applications describedabove. For example, services built on platforms such as IBM's Watson mayrequire a business enterprise to distribute individual user information,such as financial transaction information or identifiable patientrecords, to other institutions. As such, cloud-based offerings of AI asa service may be less desirable than internally managed and offered AIas a service that is supported by storage systems such as the storagesystems described above, for a wide array of technical reasons as wellas for various business reasons.

Readers will appreciate that the storage systems described above, eitheralone or in coordination with other computing machinery may beconfigured to support other AI related tools. For example, the storagesystems may make use of tools like ONXX or other open neural networkexchange formats that make it easier to transfer models written indifferent AI frameworks. Likewise, the storage systems may be configuredto support tools like Amazon's Gluon that allow developers to prototype,build, and train deep learning models. In fact, the storage systemsdescribed above may be part of a larger platform, such as IBM™ CloudPrivate for Data, that includes integrated data science, dataengineering and application building services. Such platforms mayseamlessly collect, organize, secure, and analyze data across anenterprise, as well as simplify hybrid data management, unified datagovernance and integration, data science and business analytics with asingle solution.

Readers will further appreciate that the storage systems described abovemay also be deployed as an edge solution. Such an edge solution may bein place to optimize cloud computing systems by performing dataprocessing at the edge of the network, near the source of the data. Edgecomputing can push applications, data and computing power (i.e.,services) away from centralized points to the logical extremes of anetwork. Through the use of edge solutions such as the storage systemsdescribed above, computational tasks may be performed using the computeresources provided by such storage systems, data may be storage usingthe storage resources of the storage system, and cloud-based servicesmay be accessed through the use of various resources of the storagesystem (including networking resources). By performing computationaltasks on the edge solution, storing data on the edge solution, andgenerally making use of the edge solution, the consumption of expensivecloud-based resources may be avoided and, in fact, performanceimprovements may be experienced relative to a heavier reliance oncloud-based resources.

While many tasks may benefit from the utilization of an edge solution,some particular uses may be especially suited for deployment in such anenvironment. For example, devices like drones, autonomous cars, robots,and others may require extremely rapid processing so fast, in fact, thatsending data up to a cloud environment and back to receive dataprocessing support may simply be too slow. Likewise, machines likelocomotives and gas turbines that generate large amounts of informationthrough the use of a wide array of data-generating sensors may benefitfrom the rapid data processing capabilities of an edge solution. As anadditional example, some IoT devices such as connected video cameras maynot be well-suited for the utilization of cloud-based resources as itmay be impractical (not only from a privacy perspective, securityperspective, or a financial perspective) to send the data to the cloudsimply because of the pure volume of data that is involved. As such,many tasks that really on data processing, storage, or communicationsmay be better suited by platforms that include edge solutions such asthe storage systems described above.

Consider a specific example of inventory management in a warehouse,distribution center, or similar location. A large inventory,warehousing, shipping, order-fulfillment, manufacturing or otheroperation has a large amount of inventory on inventory shelves, and highresolution digital cameras that produce a firehose of large data. All ofthis data may be taken into an image processing system, which may reducethe amount of data to a firehose of small data. All of the small datamay be stored on-premises in storage. The on-premises storage, at theedge of the facility, may be coupled to the cloud, for external reports,real-time control and cloud storage. Inventory management may beperformed with the results of the image processing, so that inventorycan be tracked on the shelves and restocked, moved, shipped, modifiedwith new products, or discontinued/obsolescent products deleted, etc.The above scenario is a prime candidate for an embodiment of theconfigurable processing and storage systems described above. Acombination of compute-only blades and offload blades suited for theimage processing, perhaps with deep learning on offload-FPGA oroffload-custom blade(s) could take in the firehose of large data fromall of the digital cameras, and produce the firehose of small data. Allof the small data could then be stored by storage nodes, operating withstorage units in whichever combination of types of storage blades besthandles the data flow. This is an example of storage and functionacceleration and integration. Depending on external communication needswith the cloud, and external processing in the cloud, and depending onreliability of network connections and cloud resources, the system couldbe sized for storage and compute management with bursty workloads andvariable conductivity reliability. Also, depending on other inventorymanagement aspects, the system could be configured for scheduling andresource management in a hybrid edge/cloud environment.

The storage systems described above may alone, or in combination withother computing resources, serves as a network edge platform thatcombines compute resources, storage resources, networking resources,cloud technologies and network virtualization technologies, and so on.As part of the network, the edge may take on characteristics similar toother network facilities, from the customer premise and backhaulaggregation facilities to Points of Presence (PoPs) and regional datacenters. Readers will appreciate that network workloads, such as VirtualNetwork Functions (VNFs) and others, will reside on the network edgeplatform. Enabled by a combination of containers and virtual machines,the network edge platform may rely on controllers and schedulers thatare no longer geographically co-located with the data processingresources. The functions, as microservices, may split into controlplanes, user and data planes, or even state machines, allowing forindependent optimization and scaling techniques to be applied. Such userand data planes may be enabled through increased accelerators, boththose residing in server platforms, such as FPGAs and Smart NICs, andthrough SDN-enabled merchant silicon and programmable ASICs.

The storage systems described above may also be optimized for use in bigdata analytics. Big data analytics may be generally described as theprocess of examining large and varied data sets to uncover hiddenpatterns, unknown correlations, market trends, customer preferences andother useful information that can help organizations make more-informedbusiness decisions. Big data analytics applications enable datascientists, predictive modelers, statisticians and other analyticsprofessionals to analyze growing volumes of structured transaction data,plus other forms of data that are often left untapped by conventionalbusiness intelligence (BI) and analytics programs. As part of thatprocess, semi-structured and unstructured data such as, for example,internet clickstream data, web server logs, social media content, textfrom customer emails and survey responses, mobile-phone call-detailrecords, IoT sensor data, and other data may be converted to astructured form. Big data analytics is a form of advanced analytics,which involves complex applications with elements such as predictivemodels, statistical algorithms and what-if analyses powered byhigh-performance analytics systems.

The storage systems described above may also support (includingimplementing as a system interface) applications that perform tasks inresponse to human speech. For example, the storage systems may supportthe execution intelligent personal assistant applications such as, forexample, Amazon's Alexa, Apple Siri, Google Voice, Samsung Bixby,Microsoft Cortana, and others. While the examples described in theprevious sentence make use of voice as input, the storage systemsdescribed above may also support chatbots, talkbots, chatterbots, orartificial conversational entities or other applications that areconfigured to conduct a conversation via auditory or textual methods.Likewise, the storage system may actually execute such an application toenable a user such as a system administrator to interact with thestorage system via speech. Such applications are generally capable ofvoice interaction, music playback, making to-do lists, setting alarms,streaming podcasts, playing audiobooks, and providing weather, traffic,and other real time information, such as news, although in embodimentsin accordance with the present disclosure, such applications may beutilized as interfaces to various system management operations.

The storage systems described above may also implement AI platforms fordelivering on the vision of self-driving storage. Such AI platforms maybe configured to deliver global predictive intelligence by collectingand analyzing large amounts of storage system telemetry data points toenable effortless management, analytics and support. In fact, suchstorage systems may be capable of predicting both capacity andperformance, as well as generating intelligent advice on workloaddeployment, interaction and optimization. Such AI platforms may beconfigured to scan all incoming storage system telemetry data against alibrary of issue fingerprints to predict and resolve incidents inreal-time, before they impact customer environments, and captureshundreds of variables related to performance that are used to forecastperformance load.

The storage systems described above may support the serialized orsimultaneous execution artificial intelligence applications, machinelearning applications, data analytics applications, datatransformations, and other tasks that collectively may form an AIladder. Such an AI ladder may effectively be formed by combining suchelements to form a complete data science pipeline, where existdependencies between elements of the AI ladder. For example, AI mayrequire that some form of machine learning has taken place, machinelearning may require that some form of analytics has taken place,analytics may require that some form of data and informationarchitecting has taken place, and so on. As such, each element may beviewed as a rung in an AI ladder that collectively can form a completeand sophisticated AI solution.

The storage systems described above may also, either alone or incombination with other computing environments, be used to deliver an AIeverywhere experience where AI permeates wide and expansive aspects ofbusiness and life. For example, AI may play an important role in thedelivery of deep learning solutions, deep reinforcement learningsolutions, artificial general intelligence solutions, autonomousvehicles, cognitive computing solutions, commercial UAVs or drones,conversational user interfaces, enterprise taxonomies, ontologymanagement solutions, machine learning solutions, smart dust, smartrobots, smart workplaces, and many others. The storage systems describedabove may also, either alone or in combination with other computingenvironments, be used to deliver a wide range of transparently immersiveexperiences where technology can introduce transparency between people,businesses, and things. Such transparently immersive experiences may bedelivered as augmented reality technologies, connected homes, virtualreality technologies, brain-computer interfaces, human augmentationtechnologies, nanotube electronics, volumetric displays, 4D printingtechnologies, or others. The storage systems described above may also,either alone or in combination with other computing environments, beused to support a wide variety of digital platforms. Such digitalplatforms can include, for example, 5G wireless systems and platforms,digital twin platforms, edge computing platforms, IoT platforms, quantumcomputing platforms, serverless PaaS, software-defined security,neuromorphic computing platforms, and so on.

Readers will appreciate that some transparently immersive experiencesmay involve the use of digital twins of various “things” such as people,places, processes, systems, and so on. Such digital twins and otherimmersive technologies can alter the way that humans interact withtechnology, as conversational platforms, augmented reality, virtualreality and mixed reality provide a more natural and immersiveinteraction with the digital world. In fact, digital twins may be linkedwith the real-world, perhaps even in real-time, to understand the stateof a thing or system, respond to changes, and so on. Because digitaltwins consolidate massive amounts of information on individual assetsand groups of assets (even possibly providing control of those assets),digital twins may communicate with each other to digital factory modelsof multiple linked digital twins.

The storage systems described above may also be part of a multi-cloudenvironment in which multiple cloud computing and storage services aredeployed in a single heterogeneous architecture. In order to facilitatethe operation of such a multi-cloud environment, DevOps tools may bedeployed to enable orchestration across clouds. Likewise, continuousdevelopment and continuous integration tools may be deployed tostandardize processes around continuous integration and delivery, newfeature rollout and provisioning cloud workloads. By standardizing theseprocesses, a multi-cloud strategy may be implemented that enables theutilization of the best provider for each workload. Furthermore,application monitoring and visibility tools may be deployed to moveapplication workloads around different clouds, identify performanceissues, and perform other tasks. In addition, security and compliancetools may be deployed for to ensure compliance with securityrequirements, government regulations, and so on. Such a multi-cloudenvironment may also include tools for application delivery and smartworkload management to ensure efficient application delivery and helpdirect workloads across the distributed and heterogeneousinfrastructure, as well as tools that ease the deployment andmaintenance of packaged and custom applications in the cloud and enableportability amongst clouds. The multi-cloud environment may similarlyinclude tools for data portability.

The storage systems described above may be used as a part of a platformto enable the use of crypto-anchors that may be used to authenticate aproduct's origins and contents to ensure that it matches a blockchainrecord associated with the product. Such crypto-anchors may take manyforms including, for example, as edible ink, as a mobile sensor, as amicrochip, and others. Similarly, as part of a suite of tools to securedata stored on the storage system, the storage systems described abovemay implement various encryption technologies and schemes, includinglattice cryptography. Lattice cryptography can involve constructions ofcryptographic primitives that involve lattices, either in theconstruction itself or in the security proof. Unlike public-key schemessuch as the RSA, Diffie-Hellman or Elliptic-Curve cryptosystems, whichare easily attacked by a quantum computer, some lattice-basedconstructions appear to be resistant to attack by both classical andquantum computers.

A quantum computer is a device that performs quantum computing. Quantumcomputing is computing using quantum-mechanical phenomena, such assuperposition and entanglement. Quantum computers differ fromtraditional computers that are based on transistors, as such traditionalcomputers require that data be encoded into binary digits (bits), eachof which is always in one of two definite states (0 or 1). In contrastto traditional computers, quantum computers use quantum bits, which canbe in superpositions of states. A quantum computer maintains a sequenceof qubits, where a single qubit can represent a one, a zero, or anyquantum superposition of those two qubit states. A pair of qubits can bein any quantum superposition of 4 states, and three qubits in anysuperposition of 8 states. A quantum computer with n qubits cangenerally be in an arbitrary superposition of up to 2{circumflex over( )}n different states simultaneously, whereas a traditional computercan only be in one of these states at any one time. A quantum Turingmachine is a theoretical model of such a computer.

The storage systems described above may also be paired withFPGA-accelerated servers as part of a larger AI or ML infrastructure.Such FPGA-accelerated servers may reside near (e.g., in the same datacenter) the storage systems described above or even incorporated into anappliance that includes one or more storage systems, one or moreFPGA-accelerated servers, networking infrastructure that supportscommunications between the one or more storage systems and the one ormore FPGA-accelerated servers, as well as other hardware and softwarecomponents. Alternatively, FPGA-accelerated servers may reside within acloud computing environment that may be used to perform compute-relatedtasks for AI and ML jobs. Any of the embodiments described above may beused to collectively serve as a FPGA-based AI or ML platform. Readerswill appreciate that, in some embodiments of the FPGA-based AI or MLplatform, the FPGAs that are contained within the FPGA-acceleratedservers may be reconfigured for different types of ML models (e.g.,LSTMs, CNNs, GRUs). The ability to reconfigure the FPGAs that arecontained within the FPGA-accelerated servers may enable theacceleration of a ML or AI application based on the most optimalnumerical precision and memory model being used. Readers will appreciatethat by treating the collection of FPGA-accelerated servers as a pool ofFPGAs, any CPU in the data center may utilize the pool of FPGAs as ashared hardware microservice, rather than limiting a server to dedicatedaccelerators plugged into it.

The FPGA-accelerated servers and the GPU-accelerated servers describedabove may implement a model of computing where, rather than keeping asmall amount of data in a CPU and running a long stream of instructionsover it as occurred in more traditional computing models, the machinelearning model and parameters are pinned into the high-bandwidth on-chipmemory with lots of data streaming though the high-bandwidth on-chipmemory. FPGAs may even be more efficient than GPUs for this computingmodel, as the FPGAs can be programmed with only the instructions neededto run this kind of computing model.

The storage systems described above may be configured to provideparallel storage, for example, through the use of a parallel file systemsuch as BeeGF S. Such parallel files systems may include a distributedmetadata architecture. For example, the parallel file system may includea plurality of metadata servers across which metadata is distributed, aswell as components that include services for clients and storageservers. Through the use of a parallel file system, file contents may bedistributed over a plurality of storage servers using striping andmetadata may be distributed over a plurality of metadata servers on adirectory level, with each server storing a part of the complete filesystem tree. Readers will appreciate that in some embodiments, thestorage servers and metadata servers may run in userspace on top of anexisting local file system. Furthermore, dedicated hardware is notrequired for client services, the metadata servers, or the hardwareservers as metadata servers, storage servers, and even the clientservices may be run on the same machines.

Readers will appreciate that, in part due to the emergence of many ofthe technologies discussed above including mobile devices, cloudservices, social networks, big data analytics, and so on, an informationtechnology platform may be needed to integrate all of these technologiesand drive new business opportunities by quickly deliveringrevenue-generating products, services, and experiences—rather thanmerely providing the technology to automate internal business processes.Information technology organizations may need to balance resources andinvestments needed to keep core legacy systems up and running while alsointegrating technologies to build an information technology platformthat can provide the speed and flexibility in areas such as, forexample, exploiting big data, managing unstructured data, and workingwith cloud applications and services. One possible embodiment of such aninformation technology platform is a composable infrastructure thatincludes fluid resource pools, such as many of the systems describedabove that, can meet the changing needs of applications by allowing forthe composition and recomposition of blocks of disaggregated compute,storage, and fabric infrastructure. Such a composable infrastructure canalso include a single management interface to eliminate complexity and aunified API to discover, search, inventory, configure, provision,update, and diagnose the composable infrastructure.

FIG. 4A depicts effects of optimized and non-optimized read voltagelevels on read values for an example single level cell flash memory.Threshold voltage 404 is on the horizontal axis of the graph, and thevertical axis represents the number of flash memory cells that have aparticular threshold voltage. Erased or unprogrammed flash memory cellsare depicted on one curve 406 that should have a read value of binary 1,and programmed or written flash memory cells are depicted on anothercurve 408 that should have a read value of binary 0. It should beappreciated that these curves 406, 408 (and further curves in FIGS. 4Band 4C) are not drawn to scale and are examples only, and that otherread values and distributions of threshold voltage for erased orprogrammed cells, or values, ranges or polarities of threshold voltage,may be applicable.

Optimized read voltage level 402, depicted as a vertical dashed line inFIG. 4A, if or when applied as a read voltage to the flash memory cellsin this example, results in the majority of erased or unprogrammed cellsbeing read as the correct read value 1 and the majority of programmedcells being read as the correct read value 0. A small number of theerased or unprogrammed cells, on the lower right end of the curve 406,will have a bit flip from 1 to 0, and be read in error as having a readvalue 0. Another small number of the programmed cells, on the lower leftend of the curve 408, will have a bit flip from 0 to 1, and be read inerror as having a read value 1. Moving the read voltage level to theright in this example will increase the 0 to 1 bit flips and decreasethe 1 to 0 bit flips. Moving the read voltage to the left in thisexample will increase the 1 to 0 bit flips and decrease the 0 to 1 bitflips. Locating the optimized read voltage level 402 at the intersectionof the curves 406, 408 (as shown in FIG. 4A) results in an approximatelyequal number or quantity of 0 to 1 bit flips and 1 to 0 bit flips, and abit flip ratio of bit flips 0 to 1 to bit flips 1 to 0 approximatelyequal to one. That is, 50% of the errors are 0 to 1 bit flips, dividedby the other 50% of the errors, which are 1 to 0 bit flips, for a 50-50ratio or 1. An inverse of the ratio 412 shown in FIG. 4A can also beused as the bit flip ratio 412. In addition, a ratio of the quantity of0 to 1 bit flips compared to the total number of errors, or the quantityof 1 to 0 bit flips compared to the total number of errors, could beused as a bit flip ratio 412 and compared to one half (or 0.5, i.e.50%). This analysis presupposes an approximately equal distribution ofones and zeros throughout the data, and it should be appreciated thatthe embodiments can be adjusted with a bias for other mixes of ones andzeros. A threshold 410 for the comparison or the ratio 412 of bit flipscan be devised to quantify the notion of “approximate” and guidedecisions about adjusting read voltage level(s).

FIG. 4B depicts optimized read voltage levels and read values for anexample multilevel cell flash memory with two bits per cell. Analysis ofFIG. 4B is an extension of analysis of FIG. 4A. For two bits per cellMLC flash memory, there are four curves 416, 418, 420, 422 representingfour levels of programming, from erased cell with read value binary 11in curve 416, through programmed levels of cell with read value binary10 in curve 418, and read value binary 00 in curve 420, to read valuebinary 01 in curve 422. It may be observed that the read values are atype or variation of Gray code (or reflected binary code, RBC) with onlyone bit changing per transition between any two adjacent read values.Other read value assignments are possible and readily devised.

Three optimized read levels 414 distinguish among the four programmedlevels of the cell and four corresponding read values in FIG. 4B. At theintersection of the curves 416, 418, a first optimized read level 414Ais located where the bit flip ratio 412 (e.g., for the least significantbit of the read value in this example) is equal to 1 within a threshold410. At the intersection of the curves 418, 420, a second optimized readlevel 414 B is located where the bit flip ratio 412 (e.g., for the mostsignificant bit of the read value in this example) is equal to 1 withina threshold 410. At the intersection of the curves 420, 422, a thirdoptimized read level 414 C is located where the bit flip ratio 412(e.g., for the least significant bit of the read value in this example)is equal to 1 within a threshold 410. In some embodiments of two bitsper cell MLC flash memory, the most significant bit of the read valuecorresponds to a page type 424 known as lower page. The leastsignificant bit of the read value corresponds to a page type 424 knownas upper page. Other flash memories may have other assignments of pagetypes 424.

FIG. 4C depicts optimized read voltage levels and read values for anexample multilevel cell flash memory with three bits per cell, alsoknown as triple level cell flash memory. Analysis of FIG. 4C is anextension of analysis of FIGS. 4A and 4B. For three bits per cell MLC,i.e., TLC flash memory, there are eight curves 426, 428, 430, 432, 434,436, 438, 440 representing eight levels of programming, from erased cellwith read value binary 111 in curve 426, through programmed levels ofcell with read value binary 110 in curve 428, read value binary 100 incurve 430, read value binary 000 in curve 432, read value binary 010 incurve 434, read value binary 011 in curve 436, and read value binary 001in curve 438, to read value 101 in curve 440.

Seven optimized read levels 442 distinguish among the eight programmedlevels of the cell and eight corresponding read values. At theintersection of the curves 426, 428, a first optimized read level 442 Ais located where the bit flip ratio 412 (e.g., for the least significantbit in this example) is equal to 1 within a threshold 410. At theintersection of the curves 428, 430, a second optimized read level 442 Bis located where the bit flip ratio 412 (e.g., for the middle bit inthis example) is equal to 1 within a threshold 410. At the intersectionof the curves 430, 432, a third optimized read level 442 C is locatedwhere the bit flip ratio 412 (e.g., for the most significant bit in thisexample) is equal to 1 within a threshold 410. At the intersection ofthe curves 432, 434, a fourth optimized read level 442 D is locatedwhere the bit flip ratio 412 (e.g., for the middle bit in this example)is equal to 1 within a threshold 410. At the intersection of the curves434, 436, a fifth optimized read level 442 E is located where the bitflip ratio 412 (e.g., for the least significant bit in this example) isequal to 1 within a threshold 410. At the intersection of the curves436, 438, a sixth optimized read level 442 F is located where the bitflip ratio 412 (e.g., for the middle bit in this example) is equal to 1within a threshold 410. At the intersection of the curves 438, 440, aseventh optimized read level 442 G is located where the bit flip ratio412 (e.g., for the most significant bit in this example) is equal to 1within a threshold 410. In some embodiments of three bits per cell MLCor TLC flash memory, the most significant bit of the read valuecorresponds to a page type 424 known as lower page. The middle bitcorresponds to a page type 424 known as upper page. And, the leastsignificant bit corresponds to a page type 424 known as extra page. Theabove analysis is readily extended to quad level cell (QLC) flashmemory, also known as four bits per cell MLC, and higher numbers of bitsper cell MLC flash memory. Various bit assignments, page assignments andread values, etc., may apply to the embodiments described herein.

FIG. 5 depicts an example command for adjusting a read voltage level ofa multilevel cell flash memory. To set or adjust a specific read voltagelevel, a command 502 with address 504 and data 506 is sent to the flashmemory device. The command 502 indicates to set a read voltage level,the address 504 indicates which level is to be set, and the data 506indicates an offset value for the selected read voltage level. Theoffset value could be an offset from a default read voltage level, anoffset from a lowest read voltage level or an offset from the highestread voltage level, a relative value, a signed value or an absolutevalue, etc. Other command sequences or communication mechanisms foradjusting or setting a read voltage level may be devised for other flashmemory devices.

FIG. 6 sets forth a system diagram of a storage system that tracks bitflips and adjusts read voltage levels of multilevel cell flash memory.Mechanisms described herein are readily applied to various storagesystems, including storage arrays and storage clusters with storagenodes as described herein, for further embodiments. Flash memory 608 hasmultiple packages 612, each of which may have multiple LUNs 614 (logicalunit numbers, which may be individual integrated circuits or ICs). Oneor more processors 602 perform writes to and reads from the flash memory608, applying error correction 604. Based on error correction, theprocessor(s) 602 can determine when a bit flip has occurred, i.e., whenthe true or corrected value of a bit differs from the read value of thebit in the original, raw data read from the flash memory prior to errorcorrection. A memory 606 (e.g., RAM, DRAM, NVRAM, or flash memory insome embodiments) has a data structure 610, which the processor(s) 602use for tracking bit flips in reads of flash memory 608, and trackingoffsets or other adjustments or settings of read voltage level(s) forthe flash memory 608, in various embodiments.

In one embodiment, the storage system determines and tracks a bit flipratio (or comparison) in reads of flash memory 608 on a per block 616 offlash memory basis, storing bit flip ratio associated with block ID inthe data structure 610 in memory 606. When the bit flip ratio for aspecific block 616 of flash memory is less than or greater than one bymore than a threshold 410, or comparison shows the bit flip ratios notequal to within a threshold, this triggers the processor(s) 602 todetermine one or more new settings for read voltage level(s) of theflash memory 608, and record one or more new offsets in the datastructure 610 associated with a block ID. In turn, the new offsets inthe data structure 610 trigger the adjustment of the read voltagelevels, for the read of data in the specified block.

In some embodiments, bit flip ratio (or comparison) is tracked relativeto a specific page type 424, and the processor(s) 602 determine aspecific optimized read level that corresponds to bit flips that arerelative to that specific page type 424. For example, the system coulddetermine bit flips relative to just the lower page of two bit, threebit or more bits MLC flash memory, and track the corresponding bit flipratio, then determine the optimized read voltage level that is causativeto bit flips relative to the lower page. From this one optimized readvoltage level, the processor(s) 602 then extrapolate the other optimizedread voltage levels that correspond to bit flips relative to otherpages. Similar embodiments track bit flips relative to middle page, orupper page, etc., and perform similar optimization of a read voltagelevel and extrapolation to other optimized read voltage levels.Extrapolation can be done by calculating read voltage levels based onlab work or testing, or theoretical analysis of transistors andcircuitry, etc. In further embodiments, bit flip ratio 412 (orcomparison) is tracked relative to all page types 424 of whichever flashmemory 608 is used in the storage system. The processor(s) 602 determineoptimized read levels corresponding to bit flips that are relative toeach of the page types 424.

In some embodiments, the storage system tracks bit flip ratios orcomparisons and offsets or settings for read voltage levels on a perblock 616 basis, and directs the setting or adjustment of read voltagelevels in the flash memory on a per LUN 614 basis. For example, thestorage system determines that an upcoming page read is for a page 618in a block 616 that should have one set of read voltage levels, but theLUN 614 holding the block 616 and page 618 is presently at anotheradjustment level of read voltage levels, for a previous read of someother page 618 in some other block 616. Next, the storage systemcommands the LUN 614 to adjust to the read voltage levels determined forthe block 616 that has the page 618 for the desired read. After readvoltage level adjustment, the storage system reads the page 618 fromflash memory 608, which uses the new read voltage levels. The storagesystem iterates revising of the read voltage levels and does not need torestore the flash memory to default read levels. Each read, of a page618 in a specific block 616, can use optimized read voltage levelsspecific to that block 616, as managed by the processor(s) 602 with thedata structure 610, even though the flash memory 608 itself only adjustsread voltage levels on a per LUN 614 basis, as commanded. Because thestorage system iteratively tunes read voltage levels on an ongoingbasis, data reads are optimized for minimized errors. In someembodiments, all reads require error correction. Adjusting read voltagemaximizes probability of error correction on the first try. In furtherembodiments, most reads will be successful without error correction, andthe data reads that need error correction are unlikely to need retries.

FIG. 7 is a flow diagram of a method of biasing read voltage for flashmemory in a storage system, which is practiced by the storage system andmore specifically by one or more processors of the storage system. Thestorage system could be a storage array with centralized storageprocessor or processors, or a storage cluster with distributed storagenodes and distributed processing, among further embodiments. In anaction 702, the storage system tracks bit flips, per block of flashmemory, relative to upper page, lower page or extra page. Bit flips aredetermined based on error correction of data reads in some embodiments.The tracking could be specific to one of these page types, or to two ormore, or all of the page types in various embodiments. In an action 704,the storage system compares or forms a ratio of 0 to 1 bit flips and 1to 0 bit flips. As part of the tracking, this is done on a per blockbasis and/or specific to one page type, or two or more or all pagetypes.

In a decision action 706, the storage system determines whether thecomparison or ratio exceeds a threshold. In some embodiments, thethreshold includes a lower threshold and an upper threshold, in order tokeep the ratio in a close range, for example between 0.5 and 1,depending on implementation. This prevents the algorithm from being“greedy”. If the answer is no, the threshold has not been exceeded, flowbranches back to the action 702, to continue tracking bit flips. If theanswer is yes, the comparison or the ratio exceeds the threshold, flowproceeds to the action 708. In the action 708, the storage systemdetermines the offset for a read voltage level, based on the comparisonor the ratio. In an action 710, the storage system extrapolates otherread voltage levels or offsets. Extrapolation could be based ontheoretical calculations, laboratory measurements or characterization offlash memories. In an action 712, the storage system forms one or morecommands to adjust one or more read voltage levels. In an action 714,the storage system sends one or more commands to adjust one or more readvoltage levels, to the flash memory. The storage system could use theexample command shown in FIG. 5, or other command or mechanism, asappropriate to a specific flash memory.

In some versions, the adjustments are made only if overall number of bitflips as above a specified threshold. If the number of errors isapproaching the error correction capability and errors are skewed, thetracking engages to optimize the read threshold and reduce the number oferrors coming from the media.

It should be appreciated that the methods described herein may beperformed with a digital processing system, such as a conventional,general-purpose computer system. Special purpose computers, which aredesigned or programmed to perform only one function may be used in thealternative. FIG. 8 is an illustration showing an exemplary computingdevice which may implement the embodiments described herein. Thecomputing device of FIG. 8 may be used to perform embodiments of thefunctionality for tracking of optimum read voltage thresholds in flashmemory in accordance with some embodiments. The computing deviceincludes a central processing unit (CPU) 801, which is coupled through abus 805 to a memory 803, and mass storage device 807. Mass storagedevice 807 represents a persistent data storage device such as a discdrive, which may be local or remote in some embodiments. The massstorage device 807 could implement a backup storage, in someembodiments. Memory 803 may include read only memory, random accessmemory, etc. Applications resident on the computing device may be storedon or accessed via a computer readable medium such as memory 803 or massstorage device 807 in some embodiments. Applications may also be in theform of modulated electronic signals modulated accessed via a networkmodem or other network interface of the computing device. It should beappreciated that CPU 801 may be embodied in a general-purpose processor,a special purpose processor, or a specially programmed logic device insome embodiments.

Display 811 is in communication with CPU 801, memory 803, and massstorage device 807, through bus 805. Display 811 is configured todisplay any visualization tools or reports associated with the systemdescribed herein. Input/output device 809 is coupled to bus 805 in orderto communicate information in command selections to CPU 801. It shouldbe appreciated that data to and from external devices may becommunicated through the input/output device 809. CPU 801 can be definedto execute the functionality described herein to enable thefunctionality described with reference to FIGS. 1-7. The code embodyingthis functionality may be stored within memory 803 or mass storagedevice 807 for execution by a processor such as CPU 801 in someembodiments. The operating system on the computing device may beMS-WINDOWS™, UNIX™, LINUX™, iOS™, CentOS™, Android™, Redhat Linux™,z/OS™, or other known operating systems. It should be appreciated thatthe embodiments described herein may also be integrated with avirtualized computing system implemented with physical computingresources.

FIG. 9 is a system action diagram depicting a storage system 901iterating adjustment of an optimal read voltage level for flash memory904, in accordance with an embodiment of the description. The storagesystem 901 is minimally depicted with one or more processors 902 andflash memory 904, but could have further components as readily devisedfor storage systems. The processor(s) 902 iterate 906 a process of readsof the flash memory 904, determination of a gradient and adjustment ofthe optimum read voltage level. In some versions, the determination of agradient and adjustment of read voltage level is performed continuallythrough regular operation of the storage system 901, during useraccesses to user data, i.e., I/O operations. Testing for a gradient, andpossible adjustment of optimum read voltage level could happen atregular or irregular time intervals, after regular or irregular numbersof data accesses, or in response to numbers of errors or error rates, invarious embodiments. In other versions, the adjustment of optimum readvoltage level happens at one or more specific calibration interval(s)outside of user accesses to user data, for example on power up or inresponse to the number of errors or error rate meeting a threshold.Graphs 908, 910, 912, 914 illustrate various cases for the gradientdetermination and adjustment of optimum read voltage level, as furtherdescribed below.

In operation, the storage system 901 performs multiple actions toiterate 906 the process of adjusting optimum read voltage level. In thefirst action 916, identified by a circled number 1 in the graphs 908,910, 912, 914, the storage system 901 performs a first read of data atan address, at an optimum read voltage level. This optimum read voltagelevel is previously determined, for example in system startup and laterin iterations of this process of adjusting optimum read voltage level.The storage system 901 determines the number of bit errors in the dataread at the optimum read voltage level. In the second action 918,identified by a circled number 2 in the graphs 908, 910, 912, 914, thestorage system 901 performs a second read of the data at that sameaddress, at another read voltage level, which could be termed a testread voltage level (since this new read voltage level is being testedfor errors). The storage system 901 determines the number of bit errorsin the data read at the test read voltage level.

In the third action 920, identified by a circled number 3 in the graphs908, 910, 912, 914, the storage system 901 determines whether there is agradient between the number of bit errors in the data read at theoptimum read voltage level (circled 1) versus the number of bit errorsin the data read at the test read voltage level (circled 2). Gradienthere may refer to a nonzero slope, or more specifically more errors orfewer errors at one read voltage level than at the other read voltagelevel. A nonzero gradient means that the previously determined optimumread voltage level is not at the theoretical optimum read voltage level,where movement (or change) of read voltage level to either side willproduce a relatively small gradient or zero gradient in someembodiments. Under such circumstances, with a nonzero gradient, it isadvantageous to adjust the optimum read voltage level in a directiontowards the theoretical optimum read voltage level, which is practicallydetermined by observing the gradient, as illustrated in the graphs 908,910, 912, 914 and further explained below. If there is a (nonzero)gradient, the storage system 901, more specifically the processor(s)902, adjusts the optimum read voltage level. This is accomplished, forexample by setting a parameter for read voltage level and communicatingto the flash memory 904. The next read of data, at whichever address isto be read next, occurs at the newly adjusted optimum read voltagelevel. After that, the system continues iterating 906, to continually ordiscreetly adjust the optimum read voltage level.

All of the graphs 908, 910, 912, 914 in FIG. 9 have the read voltagelevel on the horizontal axis and the number of bit errors in a data readon the vertical axis, with the theoretical optimum read voltage leveldepicted as a dashed vertical line. These graphs show that reading atthe theoretical optimum read voltage level shows the lowest number oferrors, and reading at a lesser or greater read voltage level results ina larger number of errors. In various embodiments, the storage system901 could operate under the conditions shown in the graphs 908, 910 forCase A and Case B, where the second read is at an incrementally greaterread voltage level than the first read (at the previously determinedoptimum read voltage level). Alternatively the storage system 901 couldoperate under the conditions shown in the graphs 912, 914 for Case C andCase D, where the second read is at an incrementally lower read voltagelevel than the first read (at the previously determined optimum readvoltage level). Some embodiments could operate under all four conditionsor cases, for example by alternating second reads at higher and lowervoltages than the previously determined optimum read voltage level usedduring the first read. In one embodiment, the choice of whether thesecond read is higher or lower is based on the slope of the previouslydetermined gradient. For example, a positive error gradient from apreviously determined optimum read voltage level to a higher test readvoltage level could result in the next test read voltage level beinglower than the next determined optimum read voltage, and vice versa.Other conditions are readily developed in keeping with the teachingsherein.

Case A, illustrated in the topmost graph 908, has the storage system 901reading data at an optimum read voltage level that was previouslydetermined (circled 1), but, unbeknownst to the storage system just yet,is to the right or at a higher read voltage level than the theoreticaloptimum read voltage level. The storage system determines a number oferrors from this read, for example by tracking bit errors or bit errorrate. Next, the storage system 901 reads the data, at the same address,at a second or test read voltage level (circled 2). In this case, thesecond or test read voltage level is higher or to the right of the readvoltage level used in the first read, for example by a specifiedincrement. The storage system determines the number of errors from thissecond read, and determines that this number of errors is greater thanthe number of errors observed in the first data read. Based on thiscomparison, the storage system adjusts the optimum read voltage level ina direction away from the test read voltage (circled 3), in this case toa lower read voltage level, for example by an increment. The adjustmentincrement can be less than, equal to, or greater than the incrementbetween the test read voltage level and the previously determinedoptimum read voltage level, in various embodiments.

Case B, illustrated in the next lower graph 910 from the top, has thestorage system 901 reading data at an optimum read voltage level thatwas previously determined (circled 1), but, unbeknownst to the storagesystem just yet, is to the left or at a lower read voltage level thanthe theoretical optimum read voltage level. The storage systemdetermines a number of errors from this read, for example by trackingbit errors or bit error rate. Next, the storage system 901 reads thedata, at the same address, at a second or test read voltage level(circled 2). In this case, the second or test read voltage level ishigher or to the right of the read voltage level used in the first read,for example by a specified increment. The storage system determines thenumber of errors from this second read, and determines that this numberof errors is less than the number of errors observed in the first dataread. Based on this comparison, the storage system adjusts the optimumread voltage level in a direction towards the test read voltage (circled3), in this case to a higher read voltage level, for example by anincrement. The adjustment increment can be less than, equal to, orgreater than the increment between the test read voltage level and thepreviously determined optimum read voltage level, in variousembodiments. In some embodiments, the system adjusts the optimum readvoltage level to the test read voltage level. That is, the adjustmentincrement is the same as the increment between the test read voltagelevel and the previously determined optimum read voltage level.

Case C, illustrated in the next lower graph 912, i.e., the second graphfrom the bottom, has the storage system 901 reading data at an optimumread voltage level that was previously determined (circled 1), but,unbeknownst to the storage system just yet, is to the right or at ahigher read voltage level than the theoretical optimum read voltagelevel. The storage system determines a number of errors from this read,for example by tracking bit errors or bit error rate. Next, the storagesystem 901 reads the data, at the same address, at a second or test readvoltage level (circled 2). In this case, the second or test read voltagelevel is lower or to the left of the read voltage level used in thefirst read, for example by a specified increment. The storage systemdetermines the number of errors from this second read, and determinesthat this number of errors is less than the number of errors observed inthe first data read. Based on this comparison, the storage systemadjusts the optimum read voltage level in a direction away from the testread voltage (circled 3), in this case to a lower read voltage level,for example by an increment. The adjustment increment can be less than,equal to, or greater than the increment between the test read voltagelevel and the previously determined optimum read voltage level, invarious embodiments. In some embodiments, the system adjusts the optimumread voltage level to the test read voltage level.

Case D, illustrated in the lowermost graph 914, has the storage system901 reading data at an optimum read voltage level that was previouslydetermined (circled 1), but, unbeknownst to the storage system just yet,is to the left or at a lower read voltage level than the theoreticaloptimum read voltage level. The storage system determines a number oferrors from this read, for example by tracking bit errors or bit errorrate. Next, the storage system 901 reads the data, at the same address,at a second or test read voltage level (circled 2). In this case, thesecond or test read voltage level is lower or to the left of the readvoltage level used in the first read, for example by a specifiedincrement. The storage system determines the number of errors from thissecond read, and determines that this number of errors is greater thanthe number of errors observed in the first data read. Based on thiscomparison, the storage system adjusts the optimum read voltage level ina direction away from the test read voltage (circled 3), in this case toa higher read voltage level, for example by an increment. The adjustmentincrement can be less than, equal to, or greater than the incrementbetween the test read voltage level and the previously determinedoptimum read voltage level, in various embodiments.

FIG. 10 is a flow diagram of a further method of biasing read voltagefor flash memory in a storage system, which is practiced by the storagesystem and more specifically by one or more processors of the storagesystem. The flash memory could be single level cell, and the readvoltage level is the only read voltage level used for reading data.Alternatively, the flash memory could be multilevel cell (e.g., TLC ortriple level cell, QLC or quad level cell, or greater number of levels),and the read voltage level being adjusted is one of the read voltagelevels (e.g., seven read voltage levels for TLC, fifteen read voltagelevels for QLC, etc.) In an action 1002, bit errors are determined for aread of data at an address in flash memory, at the optimum read voltagelevel. This optimum read voltage level is previously determined, i.e.,in a previous iteration. As an example, refer to the circled 1 in thegraphs in FIG. 9. It should be appreciated that on startup where theoptimum threshold value may not be established, an initial thresholdvalue that can be used to correct the data and obtain the bit flip countmay be utilized in some embodiments.

In an action 1004, bit errors are determined for a read of the data atthe same address, using a test read voltage level. The test read voltagecould be greater than the previously determined optimum read voltagelevel, or less than the previously determined optimum read voltagelevel, by an increment. As an example, refer to the circled 2 in thegraphs in FIG. 9. In a determination action 1006, it is determinedwhether there is a gradient between bit errors at the optimum readvoltage level and the bit errors at the test read voltage level. Forexample, the number of bit errors at the test read voltage level in thesecond read, in the action 1004, could be greater than, or less than,the number of bit errors at the optimum read voltage level used in thefirst read in the action 1002. If there is no gradient, i.e., thegradient is zero because the number of bit errors at the two readvoltage levels is the same, there is no adjustment to optimum readvoltage level, and flow proceeds to the action 1010 to prepare for thenext data read in some embodiments. If there is a gradient, i.e., thegradient is nonzero because the number of bit errors differs at the tworead voltage levels, flow proceeds to the action 1008.

In the action 1008, the optimum read voltage level is adjusted. If thenumber of bit errors for the read at the test read voltage level isgreater, the optimum read voltage level is adjusted in a direction awayfrom the test read voltage level. If the number of bit errors for theread at the test read voltage level is lower, the optimum read voltagelevel is adjusted in a direction towards the test read voltage level.More specifically, if the number of bit errors is greater for the secondread and the second read is at a read voltage level that is greater thanthe optimum read voltage level used for the first read (e.g., refer toFIG. 9 Case A), the optimum read voltage level as adjusted downward orlower, to a lower voltage level. If the number of bit errors is lowerfor the second read and the second read is at a read voltage level thatis greater than the optimum read voltage level used for the first read(e.g., see FIG. 9 Case B), the optimum read voltage level is adjustedupward or higher, to a higher voltage level. If the number of bit errorsis lower for the second read and the second read is at a read voltagelevel that is lower than the optimum read voltage level used for thefirst read (e.g., see FIG. 9 Case C), the optimum read voltage level isadjusted downward or lower, to a lower voltage level. If the number ofbit errors is greater for the second read and the second read is at aread voltage level that is lower than the optimum read voltage used forthe first read (e.g., see FIG. 9 Case D), the optimum read voltage levelis adjusted upward or higher, to a higher voltage level. In the action1010, the next address for a data read is determined. Flow then proceedsback to the action 1002, to iterate the process of determining biterrors for two different read voltage levels, determining whether agradient is present, and adjusting the optimum read voltage level.

With reference to FIGS. 9 and 10, further aspects of some embodiments ofthe storage system are discussed below. In Cases A and D, depicted ingraphs 908, 914 in FIG. 9, there is no test for the next optimum readvoltage level to which the optimum read voltage level is adjusted afterthe determination of a gradient. That is, there is no read of the samedata using the next value of the optimum read voltage level prior tochanging to the next optimum read voltage level and proceeding directlyto reading user data that the next address to be read. This iscontrasted with Cases B and C, depicted in graphs 910, 912 in FIG. 9. Inembodiments where the adjustment increment is the same as the incrementbetween the optimum read voltage level and the test read voltage level,Cases B and C in a sense test the next value of the optimum read voltagelevel in the second read (circled 2), prior to changing to the nextoptimum read voltage level and proceeding to reading user data using thenew optimum read voltage level. Such is not the case with Cases A and D,were there is no testing for bit errors for a test read with theto-be-adjusted-to optimum read voltage prior to actually adjusting theoptimum read voltage and reading data in a regular access to user data.Further embodiments are readily adapted for multilevel cell flashmemory. Each of multiple read voltage levels could be tracked andadjusted, independently of the other read voltage levels. Adjustmentincrements could be always by the same increment, up or down, in someembodiments. Alternatively, the adjustment increment could be avariable, or adjustable between single and multiples of a specifiedincrement, in further embodiments.

Detailed illustrative embodiments are disclosed herein. However,specific functional details disclosed herein are merely representativefor purposes of describing embodiments. Embodiments may, however, beembodied in many alternate forms and should not be construed as limitedto only the embodiments set forth herein.

It should be understood that although the terms first, second, etc. maybe used herein to describe various steps or calculations, these steps orcalculations should not be limited by these terms. These terms are onlyused to distinguish one step or calculation from another. For example, afirst calculation could be termed a second calculation, and, similarly,a second step could be termed a first step, without departing from thescope of this disclosure. As used herein, the term “and/or” and the “/”symbol includes any and all combinations of one or more of theassociated listed items.

As used herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”,“comprising”, “includes”, and/or “including”, when used herein, specifythe presence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof. Therefore, the terminology usedherein is for the purpose of describing particular embodiments only andis not intended to be limiting.

It should also be noted that in some alternative implementations, thefunctions/acts noted may occur out of the order noted in the figures.For example, two figures shown in succession may in fact be executedsubstantially concurrently or may sometimes be executed in the reverseorder, depending upon the functionality/acts involved.

With the above embodiments in mind, it should be understood that theembodiments might employ various computer-implemented operationsinvolving data stored in computer systems. These operations are thoserequiring physical manipulation of physical quantities. Usually, thoughnot necessarily, these quantities take the form of electrical ormagnetic signals capable of being stored, transferred, combined,compared, and otherwise manipulated. Further, the manipulationsperformed are often referred to in terms, such as producing,identifying, determining, or comparing. Any of the operations describedherein that form part of the embodiments are useful machine operations.The embodiments also relate to a device or an apparatus for performingthese operations. The apparatus can be specially constructed for therequired purpose, or the apparatus can be a general-purpose computerselectively activated or configured by a computer program stored in thecomputer. In particular, various general-purpose machines can be usedwith computer programs written in accordance with the teachings herein,or it may be more convenient to construct a more specialized apparatusto perform the required operations.

A module, an application, a layer, an agent or other method-operableentity could be implemented as hardware, firmware, or a processorexecuting software, or combinations thereof. It should be appreciatedthat, where a software-based embodiment is disclosed herein, thesoftware can be embodied in a physical machine such as a controller. Forexample, a controller could include a first module and a second module.A controller could be configured to perform various actions, e.g., of amethod, an application, a layer or an agent.

The embodiments can also be embodied as computer readable code on atangible non-transitory computer readable medium. The computer readablemedium is any data storage device that can store data, which can bethereafter read by a computer system. Examples of the computer readablemedium include hard drives, network attached storage (NAS), read-onlymemory, random-access memory, CD-ROMs, CD-Rs, CD-RWs, magnetic tapes,and other optical and non-optical data storage devices. The computerreadable medium can also be distributed over a network coupled computersystem so that the computer readable code is stored and executed in adistributed fashion. Embodiments described herein may be practiced withvarious computer system configurations including hand-held devices,tablets, microprocessor systems, microprocessor-based or programmableconsumer electronics, minicomputers, mainframe computers and the like.The embodiments can also be practiced in distributed computingenvironments where tasks are performed by remote processing devices thatare linked through a wire-based or wireless network.

Although the method operations were described in a specific order, itshould be understood that other operations may be performed in betweendescribed operations, described operations may be adjusted so that theyoccur at slightly different times or the described operations may bedistributed in a system which allows the occurrence of the processingoperations at various intervals associated with the processing.

In various embodiments, one or more portions of the methods andmechanisms described herein may form part of a cloud-computingenvironment. In such embodiments, resources may be provided over theInternet as services according to one or more various models. Suchmodels may include Infrastructure as a Service (IaaS), Platform as aService (PaaS), and Software as a Service (SaaS). In IaaS, computerinfrastructure is delivered as a service. In such a case, the computingequipment is generally owned and operated by the service provider. Inthe PaaS model, software tools and underlying equipment used bydevelopers to develop software solutions may be provided as a serviceand hosted by the service provider. SaaS typically includes a serviceprovider licensing software as a service on demand. The service providermay host the software, or may deploy the software to a customer for agiven period of time. Numerous combinations of the above models arepossible and are contemplated.

Various units, circuits, or other components may be described or claimedas “configured to” or “configurable to” perform a task or tasks. In suchcontexts, the phrase “configured to” or “configurable to” is used toconnote structure by indicating that the units/circuits/componentsinclude structure (e.g., circuitry) that performs the task or tasksduring operation. As such, the unit/circuit/component can be said to beconfigured to perform the task, or configurable to perform the task,even when the specified unit/circuit/component is not currentlyoperational (e.g., is not on). The units/circuits/components used withthe “configured to” or “configurable to” language include hardware—forexample, circuits, memory storing program instructions executable toimplement the operation, etc. Reciting that a unit/circuit/component is“configured to” perform one or more tasks, or is “configurable to”perform one or more tasks, is expressly intended not to invoke 35 U.S.C.112, sixth paragraph, for that unit/circuit/component. Additionally,“configured to” or “configurable to” can include generic structure(e.g., generic circuitry) that is manipulated by software and/orfirmware (e.g., an FPGA or a general-purpose processor executingsoftware) to operate in manner that is capable of performing the task(s)at issue. “Configured to” may also include adapting a manufacturingprocess (e.g., a semiconductor fabrication facility) to fabricatedevices (e.g., integrated circuits) that are adapted to implement orperform one or more tasks. “Configurable to” is expressly intended notto apply to blank media, an unprogrammed processor or unprogrammedgeneric computer, or an unprogrammed programmable logic device,programmable gate array, or other unprogrammed device, unlessaccompanied by programmed media that confers the ability to theunprogrammed device to be configured to perform the disclosedfunction(s).

The foregoing description, for the purpose of explanation, has beendescribed with reference to specific embodiments. However, theillustrative discussions above are not intended to be exhaustive or tolimit the invention to the precise forms disclosed. Many modificationsand variations are possible in view of the above teachings. Theembodiments were chosen and described in order to best explain theprinciples of the embodiments and its practical applications, to therebyenable others skilled in the art to best utilize the embodiments andvarious modifications as may be suited to the particular usecontemplated. Accordingly, the present embodiments are to be consideredas illustrative and not restrictive, and the invention is not to belimited to the details given herein, but may be modified within thescope and equivalents of the appended claims.

What is claimed is:
 1. A method, comprising: determining a first numberof bit errors for a first read of data at an address in the flash memoryat a previously determined optimum read voltage level; determining asecond number of bit errors for a second read of the data at the addressin the flash memory at a further read voltage level; adjusting theoptimum read voltage level based on and limited to a comparison of thefirst number of bit errors determined at the previously determinedoptimum read voltage level and the second number of bit errorsdetermined at the further read voltage level; and iterating thedetermining the first number of bit errors, the determining the secondnumber of bit errors, and the adjusting the optimum read voltage level,to adjust the optimum read voltage level in a first direction of thefurther read voltage level when the second number of bit errors is lessthan the first number of bit errors and to adjust the optimum readvoltage level in a second direction when the second number of bit errorsis greater than the first number of bit errors.
 2. The method of claim1, wherein to adjust the optimum read voltage level in the seconddirection is without determining a third number of bit errors for athird read of the data at the address.
 3. The method of claim 1,wherein: the further read voltage level is higher than the previouslydetermined optimum read voltage level by an increment; the adjusting theoptimum read voltage level in the first direction is higher by theincrement; and the adjusting the optimum read voltage level in thesecond direction is lower by the increment.
 4. The method of claim 1,the further read voltage level is lower than the previously determinedoptimum read voltage level by an increment; the adjusting the optimumread voltage level in the first direction is lower by the increment; andthe adjusting the optimum read voltage level in the second direction ishigher by the increment.
 5. The method of claim 1, further comprisingadjusting further optimum read voltage levels for multilevel cell (MLC)flash memory.
 6. The method of claim 1, wherein: to adjust the optimumread voltage level in the first direction of the further read voltagelevel is by an increment to one of: a level between the previouslydetermined optimum read voltage level and the further read voltagelevel, the further read voltage level, or a level beyond the furtherread voltage level.
 7. The method of claim 1, wherein each adjusting ofthe optimum read voltage level during the iterating, is by a sameincrement.
 8. The method of claim 1, wherein the adjusting is based on agradient in bit errors between the first number of bit errors at thepreviously determined optimum read voltage level and the second numberof bit errors at the further read voltage level.
 9. A tangible,non-transitory, computer-readable media having instructions thereuponwhich, when executed by a processor, cause the processor to perform amethod comprising: determining a first number of bit errors for a firstread of data at an address in a flash memory at a previously determinedoptimum read voltage level; determining a second number of bit errorsfor a second read of the data at the address in the flash memory at afurther read voltage level; adjusting the optimum read voltage level ina first direction of the further read voltage level, responsive todetermining the second number of bit errors is less than the firstnumber of bit errors and based on and limited to a comparison of thefirst number of bit errors determined at the previously determinedoptimum read voltage level and the second number of bit errorsdetermined at the further read voltage level; determining a third numberof bit errors for a first read of data at a further address in the flashmemory at the optimum read voltage level; determining a fourth number ofbit errors for a second read of the data at the further address in theflash memory at a still further read voltage level; and adjusting theoptimum read voltage level in a second direction, responsive todetermining the fourth number of bit errors is greater than the thirdnumber of bit errors and based on and limited to a comparison of thethird number of bit errors determined at the optimum read voltage leveland the fourth number of bit errors determined at the still further readvoltage level.
 10. The computer-readable media of claim 9, wherein theadjusting in the second direction is without testing for bit errors fora read with the to-be-adjusted-to optimum read voltage level prior toadjusting the optimum read voltage level in the second direction. 11.The computer-readable media of claim 9, wherein: the further readvoltage level is higher than the previously determined optimum readvoltage level by an increment; the adjusting the optimum read voltagelevel in the first direction is higher by the increment; the stillfurther read voltage level is higher than a present value of the optimumread voltage level by the increment; and the adjusting the optimum readvoltage level in the second direction is lower than the present value ofthe optimum read voltage level by the increment.
 12. Thecomputer-readable media of claim 9, wherein: the further read voltagelevel is lower than the previously determined optimum read voltage levelby an increment; the adjusting the optimum read voltage level in thefirst direction is lower by the increment; the still further readvoltage level is higher than a present value of the optimum read voltagelevel by the increment; and the adjusting the optimum read voltage levelin the second direction is higher than the present value of the optimumread voltage level by the increment.
 13. The computer-readable media ofclaim 9, wherein the method further comprises adjusting further optimumread voltage levels for multilevel cell (MLC) flash memory.
 14. Thecomputer-readable media of claim 9, wherein each adjusting the optimumread voltage level, in the first direction and the second direction, isby a same increment.
 15. A system, comprising: flash memory; and one ormore processors configurable to iterate: determining a first number ofbit errors for a first read of data at an address in the flash memory atan optimum read voltage level determined in a previous iteration;determining a second number of bit errors for a second read of the dataat the address in the flash memory at a further read voltage level; andadjusting, based on and limited to a comparison of the first number ofbit errors determined at the optimum read voltage level determined inthe previous iteration and the second number of bit errors determined atthe further read voltage level, the optimum read voltage level in afirst direction of the further read voltage level when the second numberof bit errors is less than the first number of bit errors and adjustingthe optimum read voltage level in a second direction when the secondnumber of bit errors is greater than the first number of bit errors. 16.The system of claim 15, wherein each time the one or more processorsperforms the adjusting the optimum read voltage level in the seconddirection, the adjusting is without having tested next optimum readvoltage level prior to using the next optimum read voltage level toaccess user data.
 17. The system of claim 15, wherein: the further readvoltage level is higher than the optimum read voltage level determinedin the previous iteration, by an increment; the adjusting the optimumread voltage level in the first direction is higher by the increment;and the adjusting the optimum read voltage level in the second directionis lower by the increment.
 18. The system of claim 15, wherein: thefurther read voltage level is lower than the optimum read voltage leveldetermined in the previous iteration, by an increment; the adjusting theoptimum read voltage level in the first direction is lower by theincrement; and the adjusting the optimum read voltage level in thesecond direction is higher by the increment.
 19. The system of claim 15,wherein: the flash memory comprises multilevel cell (MLC); and the oneor more processors are further configurable to adjust further optimumread voltage levels for the multilevel cell flash memory.
 20. The systemof claim 15, wherein the adjusting is based on detecting a gradient inbit errors between the first number of bit errors at the optimum readvoltage level determined in the previous iteration and the second numberof bit errors at the further read voltage level.